2N7002EM3T5G

2N7002EM3T5G N-Channel Mosfet www.sot23.com.tw Application Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V)   Load/Power Switching Interfacing Switching  Logic Level Shift C 60V 350mA ＜5 ohm ＜4.5 ohm LI ● ESD Protected:2000V SOT-723 3 d CH P 3 1. GATE 2. SOURCE 3. DRAIN 1 g 2 2 TE 1 1 Circuit diagram UB Package and Pin Configuration s 2 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID ±350 mA Power Dissipation PD 150 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ 1 WWW.TECHPUBLIC.COM.TW 2N7002EM3T5G N-Channel Mosfet www.sot23.com.tw Electrical Characteristics ( TA = 25°C unless otherwise noted ) Gate-Source Leakage Current Zero gate voltage drain current Input Capacitance VGS = 0V, ID=10µA 60 VGS = 0V, ID=3mA 60 Vth(GS) VDS=VGS, ID=250µA lGSS VDS=0V, VGS=±20V IDSS RDS(on) Max V 1.85 ±10 µA VDS=60V, VGS=0V 1 uA VGS=10V, ID=500mA 5 1.5 4.3 VGS=10V 42 Input Capacitance Crss VGS=0V 30 Input Capacitance Crss VGS=1Mhz 10 td(on) VDD=25V,VGS=10V,RL=250Ω, RGS=50K,RGEN=25Ω td(on) 10 Ω pF ns 15 TE Turn-on delay time CH Crss Turn-on delay time Unit V VGS=4.5V ID=200mA 1.0 Typ 2.5 PU Static Drain- Source On State Min IC Gate Threshold Voltage V(BR)DSS BL Drain -Source Breakdown Voltage Resistance Test Condition Symbol Parameter 2 WWW.TECHPUBLIC.COM.TW 2N7002EM3T5G N-Channel Mosfet www.sot23.com.tw PU BL IC 6273DFNDJH2XWOLQH'LPHQVLRQV TE CH Symbol A A1 b b1 c D E E1 e  3 Dimensions In Millimeters Min. Max. 0.430 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.080 0.150 1.150 1.250 1.150 1.250 0.750 0.850 0.800TYP. 7° REF. Dimensions In Inches Min. Max. 0.017 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.003 0.006 0.045 0.049 0.045 0.049 0.030 0.033 0.031TYP. 7° REF. WWW.TECHPUBLIC.COM.TW