MMBT5401

MMBT5401 FEATURES PNP High Voltage Transistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -150 Vdc Collector-Base Voltage VCBO -160 Vdc Emitter-Base Voltage VEBO -6.0 Vdc Ic -500 mAdc Collector Current—Continuous THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 225 mW 1.8 mW/℃ Total Device Dissipation FR-5 Board(1) TA=25℃ Derate above25℃ PD Thermal Resistance Junction to Ambient RΘJA 556 ℃/W Total Device Dissipation Alumina Substrate (2) TA=25℃ Derate above25℃ PD 300 mW 2.4 mW/℃ Thermal Resistance Junction to Ambient RΘJA 417 ℃/W Junction and Storage Temperature TJ,Tstg www.slkormicro.com 1 150℃, -55to+150℃ MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 25℃ unless otherwise noted ) Characteristic Collector-Emitter Breakdown Voltage(3) (Ic=-1.0mAdc,IB=0) Collector-Base Breakdown Voltage (Ic=-100μAdc,IE=0) Emitter-Base Breakdown Voltage (IE=-10μAdc,Ic=0) Emitter Cutoff Current (VEB=-3.0Vdc,Ic=0) Collector Cutoff Current (VCB=-120Vdc,IE=0) DC Current Gain (Ic=-1.0mAdc,VCE=-5.0Vdc) (Ic=-10mAdc,VCE=-5.0Vdc) (Ic=-50mAdc,VCE=-5.0Vdc) Symbol Min Max Unit V(BR)CEO -150 — Vdc V(BR)CBO -160 — Vdc V(BR)EBO -6.0 — Vdc IEBO — -50 nAdc ICBO — -50 nAdc HFE — 50 60 30 — 240 — — — -0.2 -0.5 — — -1.0 -1.0 fT 100 300 MHz Output Capacitance (VCB=-10.0Vdc, IE=0, f=1.0MHz) Cobo — 6.0 pF Small-Signal Current Gain (VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz) hfe 40 200 — Noise Figure (VCE=-5.0Vdc, IC=-200μAdc,Rs=1.0kΩf=1.0KHz) NF — 8.0 dB Collector-Emitter Saturation Voltage (Ic=-10mAdc, IB=-1.0mAdc) (Ic=-50mAdc, IB=-10mAdc) VCE(sat) Base-Emitter Saturation Voltage (Ic=-10mAdc, IB=-1.0mAdc) (Ic=-50mAdc, IB=-5.0mAdc) VBE(sat) Current-Gain-Bandwidth Product (Ic=-10mAdc,VCE=-10Vdc,f=100MHz) １．FR-5=1.0×0.75×0.062in. ２．Alumina=0.4×0.3×0.024in.99.5%alumina. ３．Pulse Width