MMBT5551

MMBT5551 NPN General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary PNP type available (MMBT5401). z Also available in lead free version. APPLICATIONS z Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collector-emitter voltage 160 V VEBO emitter-base voltage 6 V IC collector current (DC) 0.6 A PC Collector dissipation 0.3 W Tj ,Tstg junction and storage temperature -55-150 °C ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test V(BR)CBO Collector-base breakdown voltage IC=100μA,IE=0 180 V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA,IB=0 160 V(BR)EBO Emitter-base breakdown voltage IE=100μA,IC=0 6 ICBO collector cut-off current IE = 0; VCB = 180V - 0.1 μA IEBO emitter cut-off current IC = 0; VEB = 4V - 0.1 μA hFE DC current gain VCE = 5V; IC= 1mA VCE = 5V;IC = 10mA VCE = 5V;IC = 50 mA 80 80 30 250 - VCE(sat) collector-emitter saturation voltage IC = 50 mA; IB = 5 mA - 0.5 V VBE(sat) base-emitter saturation voltage IC = 50 mA; IB = 5 mA - 1 V fT transition frequency IC = 10mA; VCE = 10V; f = 100MHz 80 - MHz www.slkormicro.com conditions B B B 1 MIN. MAX. UNIT MMBT5551 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.slkormicro.com 2 MMBT5551 Dimensions in inch (mm) SOT-23 www.slkormicro.com 3