MMBT2907

MMBT2907 TRANSISTOR PNP SOT-23 FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PD Total Device Dissipation 250 mW RθJA Thermal Resistance Junction to Ambient 500 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO* IC=-10mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -20 nA Base cut-off current IEBO VEB =-3V, IC =0 -10 nA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1)* VCE=-10V,IC=-150mA 100 hFE(2)* VCE=-10V,IC=-0.1mA 52 hFE(3) * VCE=-10V,IC=-500mA 32 VCE(sat)* IC=-150mA,IB=-15mA -0.4 V VCE(sat)* IC=-500mA,IB=-50mA -0.67 V VBE(sat)* IC=-150mA,IB=-15mA -1 V VBE(sat)* Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf IC=-500mA,IB=-50mA VCE=-20V,IC=-50mA,f=100MHz VCE=-30V,IC=-150mA,B1=-15mA VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA *Pulse test: tp≤300μs, δ≤0.02. www.slkormicro.com 1 300 -1.2 200 V MHz 10 ns 25 ns 225 ns 60 ns MMBT2907 Typical Characteristics Static Characteristic -810uA (mA) -630uA -540uA IC -150 -450uA -360uA -100 -270uA -50 —— IC COMMON EMITTER VCE= -10V COMMON EMITTER Ta=25℃ -720uA COLLECTOR CURRENT hFE 400 Ta=100℃ hFE -900uA 300 DC CURRENT GAIN -200 200 Ta=25℃ 100 -180uA IB=-90uA -0 -0 -5 -10 -15 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE -1 -10 -100 COLLECTOR CURRENT (V) IC VBEsat —— -1200 -900 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 0 -20 Ta=100 ℃ -100 Ta=25℃ IC -600 (mA) IC Ta=25℃ -600 Ta=100 ℃ β=10 β=10 -10 -1 -10 COLLECTOR CURREMT IC -600 —— IC -300 -600 -100 -1 -10 COLLECTOR CURREMT (mA) VBE Cob/Cib 100 -600 -100 —— IC (mA) VCB/VEB Ta=25 ℃ -100 (pF) Cib C CAPACITANCE -10 T= a 25 ℃ T= a 1 00 ℃ COLLECTOR CURRENT IC (mA) f=1MHz IE=0/IC=0 -1 COMMON EMITTER VCE= -10V -300 -600 -900 Cob 1 -0.1 -0.1 -0 10 -1200 -1 fT —— IC COLLECTOR POWER DISSIPATION PC (mW) fT TRANSITION FREQUENCY PC 300 (MHz) 500 -10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) 400 300 VCE=-20V —— V -20 (V) Ta 250 200 150 100 50 o Ta=25 C 0 200 -0 -10 -20 -30 COLLECTOR CURRENT www.cj-elec.com www.slkormicro.com -40 IC -50 0 -60 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) A,Jun,2014 MMBT2907 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.slkormicro.com 3 Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8°