MMBT4401

MMBT4401 NPN Silicon Epitaxial Planar Transistor FEATURES z Epitaxial planar die construction. z Complementary PNP type available: MMBT4403. z Ideal for medium power amplification and switching. APPLICATIONS z General purpose application, switching application. SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 350 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ www.slkormicro.com 1 MMBT4401 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA Collector cut-off current ICEO VCE=35V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain Collector-emitter saturation voltage hFE B VCE=1V,IC=0.1mA 20 VCE=1V,IC=1.0mA 40 VCE=1V,IC=10mA 80 VCE=1V,IC=150mA 100 VCE=2V,IC=500mA 40 TYP IC=150mA, IB=15mA IC=500mA, IB=50mA 0.4 0.75 B Base-emitter saturation voltage IC=150mA, IB=15mA IC=500mA, IB=50mA 0.75 B VBE(sat) Transition frequency fT VCE=10V, IC= 20mA f=100MHz Collector output capacitance Cob VCB=5V,IE=0,f=1MHz www.slkormicro.com 2 0.95 1.2 B UNIT 300 B VCE(sat) MAX 250 V V MHz 6.5 pF MMBT4401 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.slkormicro.com 3 MMBT4401 Dimensions in inch (mm) SOT-23 www.slkormicro.com 4