MMBTA42

MMBTA42 TRANSISTOR NPN FEATURES z High breakdown voltage z Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous  IC0 Collector Current-Peak 0.3 A   A PC Collector Power dissipation 0.35 W RӨJA Thermal Resistance, junction to Ambient 357 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55a+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA,IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 10V, IC= 1mA 60 hFE(2) VCE= 10V, IC=10mA 100 hFE(3) VCE=10V, IC=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V DC current gain Transition frequency www.slkormicro.com fT 1 VCE= 20V, IC= 10mA, f=30MHz 50 200 MHz MMBTA42 ,&²²9&( 18 90uA COMMON EMITTER Ta=25℃ hFE 80uA 70uA DC CURRENT GAIN (mA) 12 COLLECTOR CURRENT 14 IC 16 K)(²² ,& 1000 60uA 50uA 10 40uA 8 30uA 6 Ta=100℃ Ta=25℃ 100 20uA 4 IB=10uA COMMON EMITTER VCE=10V 2 10 0.1 0 0 2 4 6 8 10 12 14 16 COLLECTOR-EMITTER VOLTAGE 20 22 10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ 100 IC (mA) 9%(VDW²² ,& 900 Ta=100 ℃ 100 1 COLLECTOR CURRENT 9&(VDW²² ,& 500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 18 VCE (V) Ta=25℃ 600 Ta=100 ℃ β=10 β=10 10 0.1 1 10 COLLECTOR CURREMT IC 300 0.1 100 IC 100 (mA) (MHz) fT 1 300 600 900 COMMON EMITTER VCE=20V Ta=25℃ 0.1 0 100 TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a 10 COMMON EMITTER VCE=10V 10 0.1 1200 1 100 &RE&LE²²9&%9(% COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ (pF) C 10 Cob 1 0.1 1 REVERSE VOLTAGE www.cj-elec.com www.slkormicro.com 10 V IC 100 (mA) 3&²²7D 400 f=1MHz IE=0/IC=0 Cib 10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE 10 I7²² ,& 300 (mA) IC COLLECTOR CURREMT (mA) ,&²² 9%( 100 COLLECTOR CURRENT 1 300 200 100 0 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) A,Jun,2014 MMBTA42 Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.slkormicro.com 3 Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8°