GS4157B-CR

GS4157B Low Voltage, SPDT 0.8Ω Analog Switch Features · On-Resistance: 0.8Ω (TYP) · TTL/CMOS Compatible · -3dB Bandwidth: 80MHz · Operating Temperature: -40°C ~ +125°C · Single-Supply Operation: +1.8V ~ +5.5V · Small Package: · Break-Before-Make Switching GS4157B Available in SOT23-6 and SC70-6 Packages · Rail-to-Rail Operation · Low Static Power General Description The GS4157B is low on-resistance (0.8Ω), fast single-pole double-throw (SPDT) CMOS switch with operation range +1.8V ~ +5.5V. The GS4157B is designed for low operating voltage, high current switching of signal gating, chopping, modulation or demodulation (modem), and speaker output for cell phone applications. The device contains a break-before-make (BBM) feature. The control input, IN, tolerates input drive signals up to 5.5V, independent of supply voltage. All devices are specified for the temperature range of -40℃ to +125℃.The GS4157B single is available in Green SC70-6 and SOT23-6 packages. Applications · Battery-Operated Equipment · Portable Systems · Wearable Devices · Cell Phones · Computer Peripherals · PDAs Pin Configuration Figure 1. Pin Assignment Diagram August 2020-REV_V0 1/9 GS4157B Absolute Maximum Ratings Condition Min Max -0.5V +7.5V Analog Input Voltage (NC NO or COM) Vss-0.5V VDD+0.5V PDB Input Voltage Vss-0.5V +7V -40°C +125°C Power Supply Voltage (VDD to Vss) Operating Temperature Range Junction Temperature +160°C Storage Temperature Range -55°C Lead Temperature (soldering, 10sec) +150°C +260°C Package Thermal Resistance (TA=+25℃) SOT23-6, θJA 190°C/W SC70-6, θJA 333°C/W ESD Susceptibility HBM 3500V MM 300V Note: Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Package/Ordering Information MODEL CHANNEL GS4157B Single PACKAGE PACKAGE MARKING DESCRIPTION OPTION INFORMATION GS4157B-CR SC70-6 Tape and Reel,3000 4157B GS4157B-TR SOT23-6 Tape and Reel,3000 4157B ORDER NUMBER August 2020-REV_V0 2/9 GS4157B Electrical Characteristics (At VS = +5V, and TA = +25℃, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TYP MIN MAX UNITS 0 VS V ANALOG SWITCH Analog Signal Range VNO ,VNC ,VCOM VS = 4.5V, VNO or VNC = 3.5V, 0.8 Ω 1.9 Ω ICOM = -10mA, Test Circuit 1 On-Resistance RON VS = 2.7V, VNO or VNC = 1.5V, ICOM = -10mA, Test Circuit 1 VS = 4.5V, VNO or VNC = 3.5V, On-Resistance Match Between Channels ΔRON 0.43 0.47 Ω 0.45 0.5 Ω 0.2 0.3 Ω 0.2 0.35 Ω 1 μA 1 μA ICOM = -10mA, Test Circuit 1 VS = 2.7V, VNO or VNC = 1.5V, ICOM = -10mA, Test Circuit 1 VS = 4.5V, VNO or VNC = 1.0V, 2.0V, 3.5V, ICOM = -10mA, Test Circuit 1 On-Resistance Flatness RFLAT(ON) VS = 2.7V, VNO or VNC = 1.0V, 1.5V, 2.0V, ICOM = -10mA, Test Circuit 1 Source OFF Leakage Current INC(OFF) ,INO(OFF) VS = 5.5V, VNO or VNC = 1.0V, 4.5V, VCOM = 4.5V, 1.0V Channel ON Leakage Current INC(ON) ,INO(ON) ,ICOM(ON) VS = 5.5V, VCOM = 1.0V, 4.5V VNO or VNC = 1.0V, 4.5V, or floating DIGITAL INPUTS Input High Voltage Input Low Voltage Input Leakage Current VS = 5V 1.5 V VS = 3V 0.9 V VINH VS = 5V 0.55 V VS = 3V 0.45 V 1 μA VINL IIN VS = 5.5V, VIN = 0V or 5.5V August 2020-REV_V0 3/9 GS4157B Electrical Characteristics (At VS = +5V, and TA = +25℃, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TYP MIN MAX UNITS DYNAMIC CHARACTERISTICS VS = 5V, VNO or VNC = 3V, VIN_H = 1.5V, VIN_L = 0V, 20 ns 28 ns 23 ns 22 ns 23 ns 27 ns VS = 5V, RS = 39Ω, CL = 50pF, Test Circuit 4 9 ns VS = 3V, RS = 39Ω, CL = 50pF, Test Circuit 4 9 ns RL = 300Ω, CL = 35pF, Test Circuit 2 Turn-On Time TON VS = 3V, VNO or VNC = 1.5V, VIN_H = 1.5V, VIN_L = 0V, RL = 300Ω, CL = 35pF, Test Circuit 2 VS = 5V, VNO or VNC = 3V, VIN_H = 1.5V, VIN_L = 0V, RL = 300Ω, CL = 35pF, Test Circuit 2 Turn-Off Time TOFF VS = 3V, VNO or VNC = 1.5V, VIN_H = 1.5V, VIN_L = 0V, RL = 300Ω, CL = 35pF, Test Circuit 2 VS = 5V, VNO1 or VNC1 = VNO2 or VNC2 = 3V, RL = 300Ω, CL = 35pF, Test Circuit 3 Break-Before-Make Time Delay TBBM VS = 3V, VNO1 or VNC1 = VNO2 or VNC2 = 3V, RL = 300Ω, CL = 35pF, Test Circuit 3 Skew Off Isolation -3dB Bandwidth TSKEW RL = 50Ω, Signal = 0dBm, f=10MHz -40 db CL = 5pF, Test Circuit 5 f=1MHz -60 db RL = 50Ω, Signal = 0dBm, CL = 5pF, Test Circuit 6 80 MHz OISO BW Source OFF Capacitance CNC(OFF) ,CNO(OFF) f=1MHz 20 pF Channel ON Capacitance CNC(ON) ,CNO(ON) ,CCOM(ON) f=1MHz 73 pF POWER REQUIREMENTS Power Supply Range VS Power Supply Current IS 1.8 VIN = 0V or VS 5.5 V 1 μA August 2020-REV_V0 4/9 GS4157B Typical Performance characteristics o At TA=+25 C, and VS=+5V, unless otherwise noted. BANDWIDTH On Response(db) On Response(db) BANDWIDTH Frequency(MHz) VS=+5V Frequency(MHz) VS=+3V RON(Ω) Typical RON vs Input Voltage (VI (VI) VI(V) August 2020-REV_V0 5/9 GS4157B Parameter Measurement Information Test Circuit 1. On-Resistance 0.1μF 50% 50% IN VDD 90% 90% Vout COM NC/NO Vout IN VSS CL RL 300Ω 35pF TON TOFF Test Circuit 2. Switching Times 0.1μF IN 50% VDD COM NC NO IN 90% 90% Vout Vout VSS CL RL 300Ω 35pF TBBM Test Circuit 3. Break-Before-Make Time Delay August 2020-REV_V0 6/9 GS4157B Parameter Measurement Information Test Circuit 4. Output Signal Skew Test Circuit 5. Off Isolation Test Circuit 6. -3dB Bandwidth August 2020-REV_V0 7/9 GS4157B Package Information SC70-6 August 2020-REV_V0 8/9 GS4157B SOT23-6 August 2020-REV_V0 9/9