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SLVU2.8S3

SLVU2.8S3

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    SOT23

  • 描述:

    TVS二极管 VRWM=2.8V VBR=3V IR=0.5uA

  • 数据手册
  • 价格&库存
SLVU2.8S3 数据手册
SLVU2.8S3 Low Voltage EPD TVS Diode For ESD and Latch-Up Protection www.sot23.com.tw Features Mechanical Characteristics 150W peak pulse power(8/20µs) One device protects one unidirectional line Two devices protect two high-speed line pairs Ultra low leakage:nA level            Low operating voltage:2.8V Low capacitance Ultra low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 10A (8/20µs)  RoHS Compliant Applications 3000 7” CH PU Reel Size Dimensions and Pin Configuration TE SLVU2.8S3 Qty per Reel Base Station Analog Inputs Switch Systems 10/100 Ethernet WAN/LAN Equipment BL      Ordering Information Part Number Package: SOT-23 Lead Finish: Matte Tin Case Material: “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Below IC     3 1 2 SLVU2.8S3 Low Voltage EPD TVS Diode For ESD and Latch-Up Protection www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power(8/20µs) Ppk 150 W Peak Pulse Current(8/20µs) IPP 10 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range TJ −55 to +125 °C Tstg −55 to +150 °C IC Storage Temperature Range kV ±30 Symbol Punch-Through Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance Max Unit 2.8 V Test Condition IR 0.5 µA VRWM = 2.8V VC 4 V IPP = 1A (8 x 20µs pulse) VC 6 V IPP = 5A (8 x 20µs pulse) 8 V IPP = 10A (8 x 20µs pulse) pF VR=0, f=1MHz VBR TE Clamping Voltage VRWM Typ PU Reverse Working Voltage Min 3.0 0.01 CH Parameter BL Electrical Characteristics (TA=25°C unless otherwise specified) VC CJ 5 V I T =2µA WWW.TECHPUBLIC.COM.TW SLVU2.8S3 Low Voltage EPD TVS Diode For ESD and Latch-Up Protection www.sot23.com.tw PROTECTION PRODUCTS Typical charateristics Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 30 Fig3. Power Derating Curve tr = 0.7~1ns Time (ns) 30ns 60ns CH 110 100 90 80 70 60 50 40 30 20 10 0 TE % of Rated Power 10% PU t - Time ( s) IC 80 90% BL IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP Percent of Peak Pulse Current % tr 0 25 50 75 100 125 150 Ambient Temperature –TA (ºC) WWW.TECHPUBLIC.COM.TW SLVU2.8S3 Low Voltage EPD TVS Diode For ESD and Latch-Up Protection www.sot23.com.tw Outline Drawing - SOT23 D A DIM e1 A A1 A2 b c D E E1 e e1 L L1 N 0 aaa bbb H 3 B C c 0 0.25 IC E1 GAUGE PLANE SEATING PLANE E L L1 DETAIL A 1 2 C A B A2 A 3X aaa C PU bbb BL bxN e SEATING PLANE A1 .035 .000 .035 .012 .003 .110 .082 .047 .015 0° .037 .114 .093 .051 .075 .037 .020 .022 3 .004 .008 .044 .004 .040 .020 .007 .120 .104 .055 .024 8° 0.89 1.12 0.01 0.10 0.88 0.95 1.02 0.30 0.51 0.08 0.18 2.80 2.90 3.04 2.10 2.37 2.64 1.20 1.30 1.40 1.90 BSC 0.95 BSC 0.40 0.50 0.60 (0.55) 3 0° 8° 0.10 0.20 SEE DETAIL A TE CH C SIDE VIEW DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX Land Pattern - SOT23 X Y DIM Z G Y C C E E1 G X Y Z DIMENSIONS INCHES MILLIMETERS (.087) .037 .075 .031 .039 .055 .141 (2.20) 0.95 1.90 0.80 1.00 1.40 3.60 E E1 WWW.TECHPUBLIC.COM.TW
SLVU2.8S3 价格&库存

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SLVU2.8S3
  •  国内价格
  • 1+0.27573

库存:57

SLVU2.8S3
    •  国内价格
    • 5+0.51668
    • 50+0.41732
    • 150+0.36764
    • 500+0.33038
    • 3000+0.30057

    库存:5332