2N2222A

2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Symbol 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A VCBO VCEO VEBO Value 60 75 30 40 5 6 Unit V V V Collector Current IC 600 mA Power Dissipation Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C SEMTECH ELECTRONICS LTD. ® Dated : 12/08/2016 Rev:02 2N2222 / 2N2222A Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 10 V, IC = 150 mA at VCE = 10 V, IC = 500 mA Collector Base Cutoff Current at VCB = 50 V at VCB = 60 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Symbol Min. Max. Unit hFE hFE hFE hFE hFE hFE 35 50 75 100 30 40 300 - - 2N2222 2N2222A ICBO - 10 10 nA 2N2222 2N2222A V(BR)CBO 60 75 - V 2N2222 2N2222A V(BR)CEO 30 40 - V 2N2222 2N2222A V(BR)EBO 5 6 - V 2N2222 2N2222A 2N2222 2N2222A VCE(sat) - 0.4 0.3 1.6 1 V VBE(sat) 0.6 - 1.3 1.2 2.6 2 V fT 250 - MHz Cob - 8 pF 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A Gain Bandwidth Product at IC = 20 mA, VCE = 20 V, f = 100 MHz Collector Output Capacitance at VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. ® Dated : 12/08/2016 Rev:02 2N2222 / 2N2222A SEMTECH ELECTRONICS LTD. ® Dated : 12/08/2016 Rev:02