CBM3232
DATASHEET
FEATURES
GENERAL DESCRIPTION
The
CBM3232
is
a
3.3V
powered
300 µA SUPPLY CURRENT
120Kbps MAX GUARENTEED DATA
EIA/TIA-232 and V.28/V.24 communication
RATE
interface with low power requirements, high
data-rate
3V/µs MINIMUM GUARANTEED SLEW
ENHANCED
ESD
has
a
stage providing true RS-232 performance
SPECIFICATIONS:
from
±15kV IEC61000-4-2 Air Discharge
CBM3232
proprietary low dropout transmitter output
RATE
capabilities.
3.3vVto
5.5V
supplies.
The
device
requires only four small 0.1 µF standard
±8kV IEC61000-4-2 Contact Discharge
external capacitors for operations from 3.3V
AVAILABLE IN SO-16,TSSOP16 AND
supply.
The CBM3232 has two receivers and two
SOP16L(W)
drivers. The device is guaranteed to run at
APPLICATIONS
data rates of 120Kbps while maintaining
RS-232 output levels. Typical applications are
Battery-Powered Equipment
Hand-Held Equipment
Peripherals
Datacom Equipment
Notebook,
Subnotebook
Computers,
Battery
Hand-Held
Equipment,
and
Powered
Palmtop
Equipment,
Peripherals
Printers.
1
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and
CBM3232
DATASHEET
PIN CONFIGURATION
PIN DESCRIPTION
PlN N°
SYMBOL
NAME AND FUNCTION
1
C1+
Positive Terminal for the first Charge Pump Capacitor
2
V+
Doubled Voltage Terminal
3
C1
Negative Terminal for the first Charge Pump Capacitor
4
C2+
Positive Terminal for the second Charge Pump Capacitor
5
C2
Negative Terminal for the second Charge Pump Capacitor
6
V-
Inverted Voltage Terminal
7
T2OUT
Second Transmitter Output Voltage
8
R2IN
Second Receiver Input Voltage
9
R2OUT
Second Receiver Output Voltage
10
T2IN
Second Transmitter Input Voltage
11
T1IN
First Transmitter Input Voltage
12
R1OUT
First Receiver Output Voltage
13
R1IN
First Receiver Input Voltage
14
T1OUT
First Transmitter Output Voltage
15
GND
Ground
16
VCC
Supply Voltage
2
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CBM3232
DATASHEET
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
-0.3 to 6
V
VCC
Supply Voltage
V+
Doubled Voltage Terminal
(VCC - 0.3) to 7
V
V-
Inverted Voltage Terminal
0.3 to -7
V
13
V
-0.3 to 6
V
± 25
V
± 13.2
V
-0.3 to (VCC + 0.3)
V
V+ +|V-|
TIN
Transmitter Input Voltage Range
RIN
Receiver Input Voltage Range
TOUT
Transmitter Output Voltage Range
ROUT
Receiver Output Voltage Range
Ta
Operating Temerature
-40 to 125
℃
Ts
Storage Temperature
-60 to 150
℃
Transmitter Output Short to GND Time
Continuous
tSHORT
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the
device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond
those indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
V+ and V-can have a maximum magnitude of +7V, but their absolute addition cannot exceed 13 V.
3
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CBM3232
DATASHEET
ELECTRICAL CHARACTERISTICS
(C1 - C4 = 0.1µF, VCC = 3.3V to 5.5V, TA = -40℃ to 85℃, unless otherwise specified.
Typical values are referred to TA = 25℃)
Symbol
Parameter
Test Conditions
ISUPPLY
VCC Power Supply Current
Min.
No Load
VCC=3.3V ±10% TA=25℃
No Load
VCC=5V ±10% TA=25℃
Typ.
Max.
Unit
2.5
5
mA
6
10
mA
Max.
Unit
8
V
LOGIC INPUT ELECTRICAL CHARACTERISTICS
(C1 - C4 = 0.1µF, VCC = 3.3V to 5.5V, TA = -40℃ to 85℃, unless otherwise specified.
Typical values are referred to TA = 25℃)
Symbol
Parameter
Test Conditions
VTIL
Input Logic Threshold Low
VTIH
Input Logic Threshold High
IIL
Input Leakage Current
Min.
Typ.
T-IN (Note 1)
VCC = 3.3V
VCC = 5V
2
V
2.4
V
T-IN
± 0.01
± 1
µA
Note1: Transmitter input hysteresis is typically 250mV
TRANSMITTER ELECTRICAL CHARACTERISTICS
(C1 - C4 = 0.1µF tested at VCC = 3.3V to 5.5V, TA = -40℃ to 85℃, unless otherwise specified.
Typical values are referred to TA = 25℃)
Symbol
Parameter
Test Conditions
Min.
Typ.
VCC = 5.0V
± 5
± 5.4
VCC = 3.3V
± 3.5
± 4.0
VCC = V+ = V- = 0V
VOUT=±2V
300
10M
VCC = 3.3V to 5V
VOUT=0V
All Transmitter
VTOUT
Output Voltage Swing
outputs are loaded
with 3KΩ to GND
RTOUT
ITSC
Transmitter Output
Resistance
Output Short Circuit
Current
Max.
Unit
V
Ω
± 60
mA
4
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CBM3232
DATASHEET
RECEIVER ELECTRICAL CHARACTERISTICS
(C1 - C4 = 0.1µF tested at VCC = 3.3V to 5.5V, TA = -40℃ to 85℃, unless otherwise specified.
Typical values are referred to TA = 25℃)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
25
V
Receiver Input
VRIN
Voltage Operating
-25
Range
VRIL
VRIH
RS-232 Input
TA = 25℃
VCC = 3.3V
0.6
1.2
Threshold Low
TA = 25℃
VCC = 5V
0.8
1.5
RS-232 Input
TA = 25℃
VCC = 3.3V
1.5
2.4
Threshold High
TA = 25℃
VCC = 5V
1.8
2.4
V
VRIHYS
Input Hysteresis
RRIN
Input Resistance
TA = 25℃
TTL/CMOS Output
IOUT = 1.6mA
VCC = 3.3V
Voltage Low
IOUT = 3.2mA
VCC = 5.5V
TTL/CMOS Output
IOUT = -0.5mA
VCC = 3.3V
VCC-0.
VCC-0.
Voltage High
IOUT = -1mA
VCC = 5.5V
6
1
VROL
VROH
V
0.3
3
V
5
7
kΩ
0.4
V
V
TIMING CHARACTERISTICS
(C1 - C4 = 0.1µF, VCC = 3.3V to 5.5V, TA = -40℃ to 85°C, unless otherwise specified. Typical
values are referred to TA = 25℃)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
120
Kbps
CL2= 1000pF
DR
Data Transfer Rate
RL = 3KΩ
one transmitter
VCC=3.3V
switching
tPHLR
Propagation Delay
tPLHR
Input to Output
tPHLT
Propagation Delay
tPLHT
Input to Output
|tPHLR
Receiver
- tPLHR|
RXIN=RXOUT
CL = 150pF
4.0
9.7
µs
RL = 3KΩ
CL = 2500pF
2.0
5.0
µs
Propagation Delay
|tPHLT
Transmitter
- tPLHT|
Difference
Propagation Delay
TA = 25℃
SRT
300
ns
300
ns
Difference
Transition Slew
Rate
RL = 3KΩ to 7KΩ
VCC = 3.3V
measured from +3V to -3V or
3
30
V/μs
-3V to +3V CL = 150pF to
1000pF
5
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CBM3232
DATASHEET
APPLICATION CIRCUITS
CAPACITANCE VALUE (µF)
VCC
C1
C2
C3
C4
Cbypass
3.0 to 5.5
1.0
1.0
1.0
1.0
1.0
6
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CBM3232
DATASHEET
TYPICAL OPERATING CHARACTERISTICS
(VCC = +3.3V, 120kbps data rate, 0.1μF capacitors, all transmitters loaded with 3k
, TA=
+25℃, unless otherwise noted.)
TRANSMITTER OUTPUT VOLTAGE vs. LOAD CAPACITANCE
SLEW RATE vs. LOAD CAPACITANCE
7
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CBM3232
DATASHEET
ESD PROTECTION
The CBM3232 incorporates ruggedized ESD cells on all driver output and receiver input pins.
The ESD structure is for rugged applications and environments sensitive to electro-static
discharges and associated transients. The ESD tolerance is at least ±15kV without damage or
latch-up.
There are different methods of ESD testing applied:
a)
MIL-STD-883, Method 3015.7
b)
IEC1000-4-2 Air-Discharge
The Human Body Model has been the generally accepted ESD testing method for
semiconductors.
This method is also specified in MIL-STD- 883, Method 3015.7 for ESD testing.
The premise of this ESD testi s to simulate the human body’s potential to store electro-static
energy and discharge it to an integrated
circuit. The simulation is performed by using a test
model as shown in Figure 1. This method will test the IC’s capability to withstand an ESD
transient during normal handling such as in manufacturing areas where the
IC’s tend to be
handled frequently.
The IEC-1000-4-2, formerly IEC801-2, is generally used for testing ESD on equipment and
systems.
For system manufacturers, they must guarantee a certain amount of ESD protection
since the system itself is exposed to the outside environment and human presence. The premise
with IEC1000-4-2 is that the system
is required to withstand an amount of static electricity
when ESD is applied to points and surfaces of the
equipment that are accessible to personnel
during normal usage. The transceiver IC receives most of the
ESD current when the ESD source
is applied to the connector pins. The test circuit for IEC1000-4-2 is shown on Figure 2. There are
two methods within IEC1000-4-2, the Air Discharge method and the Contact Discharge method.
With the Air Discharge Method, an ESD voltage is applied to the equipment under test (EUT)
through air. This simulates an electrically charged person ready to connect a cable onto the rear
of the system only to find an unpleasant zap just before the person touches the back panel. The
high energy potential on the person discharges through an arcing path to the rear panel of the
system before he or she even touches the system. This energy, whether discharged directly or
through air, is predominantly a function of the discharge current rather than the discharge
voltage. Variables with an air discharge such as approach speed of the object carrying the ESD
potential to the system and humidity will tend to change the discharge current. For example, the
rise time of the discharge current varies with the approach speed.
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CBM3232
DATASHEET
Fig. 1 ESD Test Circuit for Human Body Model
The Contact Discharge Method applies the ESD current directly to the EUT. This method was
devised to reduce the unpredictability of the ESD arc. The discharge current rise time is constant
since the energy is directly transferred without the air-gap arc. In situations such as hand held
systems, the ESD charge can be directly discharged to the equipment from a person already
holding the equipment. The current is transferred on to the keypad or the serial port of the
equipment directly and then travels through the PCB and finally to the IC.
The circuit models in Figures 1 and 2 represent the typical ESD testing circuits used for these
methods. The CS is initially charged with the DC power supply when the first switch (SW1) is on.
Now that the capacitor is charged, the second switch (SW2) is on while SW1 switches off. The
voltage stored in the capacitor is then applied through RS, the current limiting resistor, onto the
device under test (DUT). In ESD tests, the SW2 switch is pulsed so that the device under test
receives a duration of voltage.
Fig. 2. ESD Test Circuit for IEC1000-4-2
9
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CBM3232
DATASHEET
Fig. 3.
ESD Test Waveform for IEC1000-4-2
For the Human Body Model, the current limiting resistor (RS) and the source capacitor (CS)
are 1.5kΩ an 100pF, respectively. For IEC-1000-4-2, the current limiting resistor (RS) and the
source capacitor (CS) are 330Ω an 150pF, respectively. The higher CS value and lower RS value in
the IEC1000-4-2 model are more stringent than the Human Body Model. The larger storage
capacitor injects a higher voltage to the test point when SW2 is switched on. The lower current
limiting resistor increases the current charge onto the test point.
Device Pin Tested
IEC1000-4-2
Air Discharge
Level
Driver Outputs
±15kV
4
Receiver Inputs
±15kV
4
10
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CBM3232
DATASHEET
PACKAGE
NOTES: 1. Dimensions A and B do not include mold flash or protrusion.
2.
Maximum mold flash or protrusion 0.15 mm (0.006) per side for A; for B ‑ 0.25 mm
(0.010) per side.
Symbol
Dimensions ,mm
Min
Max
A
9.8
10
B
3.8
4
C
1.35
1.75
D
0.33
0.51
F
0.4
1.27
G
1.27
H
5.72
J
0°
8°
K
0.1
0.25
M
0.19
0.25
P
5.8
6.2
R
0.25
0.5
11
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CBM3232
DATASHEET
DIMENSIONS
in inches(mm) Minimum/Maximum
Symbol
D
e
16 Lead
20Lead
0.193/0.201
0.252/0.260
(4.90/5.10)
(6.40/6.60)
0.026 BSC
0.026 BSC
(0.65BSC)
(0.65 BSC)
12
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CBM3232
DATASHEET
PACKAGE/ORDERING INFORMATION
PRODUCT
ORDERING
PAKEAGE
TRANSPOT
MARKING
MEDIA,QUANTILY
SOIC-16(SOP16)
CBM3232AS
Tape and Reel,2500
-0℃~70℃
SOIC-16(SOP16)
CBM3232AC
Tape and Reel,2500
CBM3232ATS16
-40℃~125℃
TSSOP-16
CBM3232AT
Tape and Reel,3000
CBM3232ATC16
-0℃~75℃
TSSOP-16
CBM3232ATC
Tape and Reel,3000
TEMPRANGE
PACKAGE
CBM3232AS16
-40℃~125℃
CBM3232ACS16
NUMBER
CBM3232
CBM3232
13
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