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CBM3232AS16

CBM3232AS16

  • 厂商:

    COREBAI(芯佰微)

  • 封装:

    SOP16_150MIL

  • 描述:

    300uA 速率120Kbps 3V/us

  • 数据手册
  • 价格&库存
CBM3232AS16 数据手册
CBM3232 DATASHEET FEATURES GENERAL DESCRIPTION The CBM3232 is a 3.3V powered  300 µA SUPPLY CURRENT  120Kbps MAX GUARENTEED DATA EIA/TIA-232 and V.28/V.24 communication RATE interface with low power requirements, high  data-rate 3V/µs MINIMUM GUARANTEED SLEW ENHANCED ESD has a stage providing true RS-232 performance SPECIFICATIONS: from ±15kV IEC61000-4-2 Air Discharge  CBM3232 proprietary low dropout transmitter output RATE  capabilities. 3.3vVto 5.5V supplies. The device requires only four small 0.1 µF standard ±8kV IEC61000-4-2 Contact Discharge external capacitors for operations from 3.3V AVAILABLE IN SO-16,TSSOP16 AND supply. The CBM3232 has two receivers and two SOP16L(W) drivers. The device is guaranteed to run at APPLICATIONS data rates of 120Kbps while maintaining RS-232 output levels. Typical applications are  Battery-Powered Equipment  Hand-Held Equipment  Peripherals  Datacom Equipment Notebook, Subnotebook Computers, Battery Hand-Held Equipment, and Powered Palmtop Equipment, Peripherals Printers. 1 www.corebai.com and CBM3232 DATASHEET PIN CONFIGURATION PIN DESCRIPTION PlN N° SYMBOL NAME AND FUNCTION 1 C1+ Positive Terminal for the first Charge Pump Capacitor 2 V+ Doubled Voltage Terminal 3 C1 Negative Terminal for the first Charge Pump Capacitor 4 C2+ Positive Terminal for the second Charge Pump Capacitor 5 C2 Negative Terminal for the second Charge Pump Capacitor 6 V- Inverted Voltage Terminal 7 T2OUT Second Transmitter Output Voltage 8 R2IN Second Receiver Input Voltage 9 R2OUT Second Receiver Output Voltage 10 T2IN Second Transmitter Input Voltage 11 T1IN First Transmitter Input Voltage 12 R1OUT First Receiver Output Voltage 13 R1IN First Receiver Input Voltage 14 T1OUT First Transmitter Output Voltage 15 GND Ground 16 VCC Supply Voltage 2 www.corebai.com CBM3232 DATASHEET ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit -0.3 to 6 V VCC Supply Voltage V+ Doubled Voltage Terminal (VCC - 0.3) to 7 V V- Inverted Voltage Terminal 0.3 to -7 V 13 V -0.3 to 6 V ± 25 V ± 13.2 V -0.3 to (VCC + 0.3) V V+ +|V-| TIN Transmitter Input Voltage Range RIN Receiver Input Voltage Range TOUT Transmitter Output Voltage Range ROUT Receiver Output Voltage Range Ta Operating Temerature -40 to 125 ℃ Ts Storage Temperature -60 to 150 ℃ Transmitter Output Short to GND Time Continuous tSHORT * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. V+ and V-can have a maximum magnitude of +7V, but their absolute addition cannot exceed 13 V. 3 www.corebai.com CBM3232 DATASHEET ELECTRICAL CHARACTERISTICS (C1 - C4 = 0.1µF, VCC = 3.3V to 5.5V, TA = -40℃ to 85℃, unless otherwise specified. Typical values are referred to TA = 25℃) Symbol Parameter Test Conditions ISUPPLY VCC Power Supply Current Min. No Load VCC=3.3V ±10% TA=25℃ No Load VCC=5V ±10% TA=25℃ Typ. Max. Unit 2.5 5 mA 6 10 mA Max. Unit 8 V LOGIC INPUT ELECTRICAL CHARACTERISTICS (C1 - C4 = 0.1µF, VCC = 3.3V to 5.5V, TA = -40℃ to 85℃, unless otherwise specified. Typical values are referred to TA = 25℃) Symbol Parameter Test Conditions VTIL Input Logic Threshold Low VTIH Input Logic Threshold High IIL Input Leakage Current Min. Typ. T-IN (Note 1) VCC = 3.3V VCC = 5V 2 V 2.4 V T-IN ± 0.01 ± 1 µA Note1: Transmitter input hysteresis is typically 250mV TRANSMITTER ELECTRICAL CHARACTERISTICS (C1 - C4 = 0.1µF tested at VCC = 3.3V to 5.5V, TA = -40℃ to 85℃, unless otherwise specified. Typical values are referred to TA = 25℃) Symbol Parameter Test Conditions Min. Typ. VCC = 5.0V ± 5 ± 5.4 VCC = 3.3V ± 3.5 ± 4.0 VCC = V+ = V- = 0V VOUT=±2V 300 10M VCC = 3.3V to 5V VOUT=0V All Transmitter VTOUT Output Voltage Swing outputs are loaded with 3KΩ to GND RTOUT ITSC Transmitter Output Resistance Output Short Circuit Current Max. Unit V Ω ± 60 mA 4 www.corebai.com CBM3232 DATASHEET RECEIVER ELECTRICAL CHARACTERISTICS (C1 - C4 = 0.1µF tested at VCC = 3.3V to 5.5V, TA = -40℃ to 85℃, unless otherwise specified. Typical values are referred to TA = 25℃) Symbol Parameter Test Conditions Min. Typ. Max. Unit 25 V Receiver Input VRIN Voltage Operating -25 Range VRIL VRIH RS-232 Input TA = 25℃ VCC = 3.3V 0.6 1.2 Threshold Low TA = 25℃ VCC = 5V 0.8 1.5 RS-232 Input TA = 25℃ VCC = 3.3V 1.5 2.4 Threshold High TA = 25℃ VCC = 5V 1.8 2.4 V VRIHYS Input Hysteresis RRIN Input Resistance TA = 25℃ TTL/CMOS Output IOUT = 1.6mA VCC = 3.3V Voltage Low IOUT = 3.2mA VCC = 5.5V TTL/CMOS Output IOUT = -0.5mA VCC = 3.3V VCC-0. VCC-0. Voltage High IOUT = -1mA VCC = 5.5V 6 1 VROL VROH V 0.3 3 V 5 7 kΩ 0.4 V V TIMING CHARACTERISTICS (C1 - C4 = 0.1µF, VCC = 3.3V to 5.5V, TA = -40℃ to 85°C, unless otherwise specified. Typical values are referred to TA = 25℃) Symbol Parameter Test Conditions Min. Typ. Max. Unit 120 Kbps CL2= 1000pF DR Data Transfer Rate RL = 3KΩ one transmitter VCC=3.3V switching tPHLR Propagation Delay tPLHR Input to Output tPHLT Propagation Delay tPLHT Input to Output |tPHLR Receiver - tPLHR| RXIN=RXOUT CL = 150pF 4.0 9.7 µs RL = 3KΩ CL = 2500pF 2.0 5.0 µs Propagation Delay |tPHLT Transmitter - tPLHT| Difference Propagation Delay TA = 25℃ SRT 300 ns 300 ns Difference Transition Slew Rate RL = 3KΩ to 7KΩ VCC = 3.3V measured from +3V to -3V or 3 30 V/μs -3V to +3V CL = 150pF to 1000pF 5 www.corebai.com CBM3232 DATASHEET APPLICATION CIRCUITS CAPACITANCE VALUE (µF) VCC C1 C2 C3 C4 Cbypass 3.0 to 5.5 1.0 1.0 1.0 1.0 1.0 6 www.corebai.com CBM3232 DATASHEET TYPICAL OPERATING CHARACTERISTICS (VCC = +3.3V, 120kbps data rate, 0.1μF capacitors, all transmitters loaded with 3k , TA= +25℃, unless otherwise noted.) TRANSMITTER OUTPUT VOLTAGE vs. LOAD CAPACITANCE SLEW RATE vs. LOAD CAPACITANCE 7 www.corebai.com CBM3232 DATASHEET ESD PROTECTION The CBM3232 incorporates ruggedized ESD cells on all driver output and receiver input pins. The ESD structure is for rugged applications and environments sensitive to electro-static discharges and associated transients. The ESD tolerance is at least ±15kV without damage or latch-up. There are different methods of ESD testing applied: a) MIL-STD-883, Method 3015.7 b) IEC1000-4-2 Air-Discharge The Human Body Model has been the generally accepted ESD testing method for semiconductors. This method is also specified in MIL-STD- 883, Method 3015.7 for ESD testing. The premise of this ESD testi s to simulate the human body’s potential to store electro-static energy and discharge it to an integrated circuit. The simulation is performed by using a test model as shown in Figure 1. This method will test the IC’s capability to withstand an ESD transient during normal handling such as in manufacturing areas where the IC’s tend to be handled frequently. The IEC-1000-4-2, formerly IEC801-2, is generally used for testing ESD on equipment and systems. For system manufacturers, they must guarantee a certain amount of ESD protection since the system itself is exposed to the outside environment and human presence. The premise with IEC1000-4-2 is that the system is required to withstand an amount of static electricity when ESD is applied to points and surfaces of the equipment that are accessible to personnel during normal usage. The transceiver IC receives most of the ESD current when the ESD source is applied to the connector pins. The test circuit for IEC1000-4-2 is shown on Figure 2. There are two methods within IEC1000-4-2, the Air Discharge method and the Contact Discharge method. With the Air Discharge Method, an ESD voltage is applied to the equipment under test (EUT) through air. This simulates an electrically charged person ready to connect a cable onto the rear of the system only to find an unpleasant zap just before the person touches the back panel. The high energy potential on the person discharges through an arcing path to the rear panel of the system before he or she even touches the system. This energy, whether discharged directly or through air, is predominantly a function of the discharge current rather than the discharge voltage. Variables with an air discharge such as approach speed of the object carrying the ESD potential to the system and humidity will tend to change the discharge current. For example, the rise time of the discharge current varies with the approach speed. 8 www.corebai.com CBM3232 DATASHEET Fig. 1 ESD Test Circuit for Human Body Model The Contact Discharge Method applies the ESD current directly to the EUT. This method was devised to reduce the unpredictability of the ESD arc. The discharge current rise time is constant since the energy is directly transferred without the air-gap arc. In situations such as hand held systems, the ESD charge can be directly discharged to the equipment from a person already holding the equipment. The current is transferred on to the keypad or the serial port of the equipment directly and then travels through the PCB and finally to the IC. The circuit models in Figures 1 and 2 represent the typical ESD testing circuits used for these methods. The CS is initially charged with the DC power supply when the first switch (SW1) is on. Now that the capacitor is charged, the second switch (SW2) is on while SW1 switches off. The voltage stored in the capacitor is then applied through RS, the current limiting resistor, onto the device under test (DUT). In ESD tests, the SW2 switch is pulsed so that the device under test receives a duration of voltage. Fig. 2. ESD Test Circuit for IEC1000-4-2 9 www.corebai.com CBM3232 DATASHEET Fig. 3. ESD Test Waveform for IEC1000-4-2 For the Human Body Model, the current limiting resistor (RS) and the source capacitor (CS) are 1.5kΩ an 100pF, respectively. For IEC-1000-4-2, the current limiting resistor (RS) and the source capacitor (CS) are 330Ω an 150pF, respectively. The higher CS value and lower RS value in the IEC1000-4-2 model are more stringent than the Human Body Model. The larger storage capacitor injects a higher voltage to the test point when SW2 is switched on. The lower current limiting resistor increases the current charge onto the test point. Device Pin Tested IEC1000-4-2 Air Discharge Level Driver Outputs ±15kV 4 Receiver Inputs ±15kV 4 10 www.corebai.com CBM3232 DATASHEET PACKAGE NOTES: 1. Dimensions A and B do not include mold flash or protrusion. 2. Maximum mold flash or protrusion 0.15 mm (0.006) per side for A; for B ‑ 0.25 mm (0.010) per side. Symbol Dimensions ,mm Min Max A 9.8 10 B 3.8 4 C 1.35 1.75 D 0.33 0.51 F 0.4 1.27 G 1.27 H 5.72 J 0° 8° K 0.1 0.25 M 0.19 0.25 P 5.8 6.2 R 0.25 0.5 11 www.corebai.com CBM3232 DATASHEET DIMENSIONS in inches(mm) Minimum/Maximum Symbol D e 16 Lead 20Lead 0.193/0.201 0.252/0.260 (4.90/5.10) (6.40/6.60) 0.026 BSC 0.026 BSC (0.65BSC) (0.65 BSC) 12 www.corebai.com CBM3232 DATASHEET PACKAGE/ORDERING INFORMATION PRODUCT ORDERING PAKEAGE TRANSPOT MARKING MEDIA,QUANTILY SOIC-16(SOP16) CBM3232AS Tape and Reel,2500 -0℃~70℃ SOIC-16(SOP16) CBM3232AC Tape and Reel,2500 CBM3232ATS16 -40℃~125℃ TSSOP-16 CBM3232AT Tape and Reel,3000 CBM3232ATC16 -0℃~75℃ TSSOP-16 CBM3232ATC Tape and Reel,3000 TEMPRANGE PACKAGE CBM3232AS16 -40℃~125℃ CBM3232ACS16 NUMBER CBM3232 CBM3232 13 www.corebai.com
CBM3232AS16 价格&库存

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CBM3232AS16
  •  国内价格
  • 1+4.18500
  • 10+4.03000
  • 100+3.65800
  • 500+3.47200

库存:0

CBM3232AS16

库存:0

CBM3232AS16
    •  国内价格
    • 1+4.08870
    • 10+3.38410
    • 30+3.03770
    • 100+2.67960
    • 500+2.28690
    • 1000+2.18290

    库存:0

    CBM3232AS16
      •  国内价格
      • 25+3.73879

      库存:0