BZX84C12V

BZX84C2V4-BZX84C43 Surface mount zener diode FEATURES z Planar Die Construction z 300mW Power Dissipation Zener Voltages from 2.4V - 43V z z Ultra-Small Surface Mount Package Power Dissipation SOT-23 Maximum Ratings(Ta=25℃ unless otherwise specified) Characteristic Symbol Value Unit VF Pd 0.9 300 V mW RθJA 417 Junction Temperature Tj 150 ℃ /W ℃ Storage Temperature Range Tstg -55~+150 ℃ Forward Voltage (Note 2) Power Dissipation(Note 1) @ IF = 10mA Thermal Resistance from Junction to Ambient www.slkormicro.com 1 BZX84C2V4-BZX84C43 ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise specified Maximum Zener ZenerVoltage Range (Note 2) Type Number Impedance VZ@IZT IZT ZZT@IZT ZZK@IZK (Ω) Temperature Reverse Coefficent of Current (Note 3) Code Maximum Zener voltage @ IZT=5mA IZK IR mV/°C VR Nom(V) Min(V) Max(V) (mA) (mA) (μA) (V) Min Max BZX84C2V4 Z11 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 BZX84C2V7 Z12 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 BZX84C3V0 Z13 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 BZX84C3V3 Z14 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 BZX84C3V6 Z15 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 BZX84C3V9 Z16 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 BZX84C4V3 Z17 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 BZX84C4V7 Z1 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 BZX84C5V1 Z2 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 BZX84C5V6 Z3 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 BZX84C6V2 Z4 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 BZX84C6V8 Z5 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 BZX84C7V5 Z6 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 BZX84C8V2 Z7 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 BZX84C9V1 Z8 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 BZX84C10 Z9 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 BZX84C11 Y1 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 BZX84C12 Y2 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 BZX84C13 Y3 13 12.4 14.1 5 30 170 1.0 0.1 8.0 BZX84C15 Y4 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 BZX84C16 Y5 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 BZX84C18 Y6 18 16.8 19.1 5 BZX84C20 Y7 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 BZX84C22 Y8 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 BZX84C24 Y9 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 BZX84C27 Y10 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 BZX84C30 Y11 30 28.0 32.0 2 BZX84C33 Y12 33 31.0 35.0 2 BZX84C36 Y13 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 BZX84C39 Y14 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 BZX84C43 Y15 43 40.0 46.0 2 100 700 1 0.1 32 45 80 80 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, period=5ms,pulse width =300μs. 3. f = 1kHZ. www.slkormicro.com 2 225 300 325 1.0 0.5 0.5 0.1 0.1 0.1 12.6 21.0 23.1 7.0 12.4 24.4 27.4 10 11.0 16.0 29.4 33.4 12 BZX84C2V4-BZX84C43 100 Ta =25℃ PD =300mW Pulsed 1 43 39 36 33 30 27 1 0.5 1 2 3 4 5 6 7 8 9 10 0.5 10 11 15 20 VZ, ZENER VOLTAGE (V) 25 30 35 40 50 Typical Leakage Current 100 Pulsed TYPICAL Ta VALUES 35 45 VZ, ZENER VOLTAGE (V) Temperature Coefficients 40 FOR BZX84CXXX SERIES 10 30 IR, LEAKAGE CURRENT (uA) θVZ, TEMPERATURE COEFFICIENT (mV/℃) 24 20 22 10 18 10 9.1 8.2 7.5 6.2 6.8 5.1 5.6 4.7 2.4 10 PD =300mW 11 12 13 IZ, ZENER CURRENT (mA) Pulsed 15 16 Ta =25℃ IZ, ZENER CURRENT (mA) Zener Characteristics(11 V to 43 V) Zener Characteristics(VZ Up to 10 V) 100 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100℃ 1E-3 0 Ta=25℃ -5 1E-4 0 4 8 12 16 20 24 28 32 36 40 0 44 5 VZ, NOMINAL ZENER VOLTAGE (V) 10 15 20 25 45 Ta=25℃ f=1MHz ZZT, DYNAMIC IMPEDANCE(Ω) 100 1V BIAS BIAS AT 50% OF VZ NOM 10 IZ(AC)=0.1IZ(DC) IZ=1mA 0V BIAS C, CAPACITANCE (pF) 40 1000 Ta=25℃ 1 f=1kHz 100 IZ=5mA 10 1 1 10 100 1 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve 300 PD 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.slkormicro.com 100 Ta 10 VZ, NOMINAL ZENER VOLTAGE (V) 350 (mW) 35 Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 POWER DISSIPATION 30 VZ, NOMINAL ZENER VOLTAGE (V) 125 150 (℃ ) 3 100