SL3904T

SL3904T NPN Switching Transistor 3 2 ■ Features 1 ● Small Package ■ Simplified outline(SOT-523) ● Complementary to SL3906T ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 200 mA Collector Power Dissipation PC 150 mW RθJA 833 °C/W Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range www.slkormicro.com 1.Base 2.Emitter 3.Collector TJ 150 Tstg -55 to 150 1 Unit V ℃ SL3904T ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 40 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 100 Collector cut-off current ICEX VCE= 30 V , VEB(off)=3V 50 Emitter cut-off current IEBO VEB= 5V , IC=0 100 IC=10 mA, IB=1mA 0.2 Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain VCE(sat) VBE(sat) IC= 50 mA, IB= 5mA IC=10 mA, IB=1mA IC= 50 mA, IB= 5mA VCE= 10V, IC= 0.1mA 40 hFE(2) VCE= 10V, IC= 1mA 70 hFE(3) VCE= 10V, IC= 10mA 100 60 hFE(4) VCE= 10V, IC= 50mA td Rise time tr VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA Storage time ts Fall time tf 0.85 35 35 200 VCC=3V, IC=10mA, IB1=IB2=1mA nS 50 Cob VCB= 5V, IE= 0,f=1MHz 4 Base input capacitance Cib VEB=0.5V, IC=0, f=1MHz 8 Transition frequency fT VCE= 20V, IC= 10mA,f=100MHz 2 V 300 Collector output capacitance www.slkormicro.com nA 0.95 hFE(1) Delay time V 0.3 0.65 Unit 300 pF MHz SL3904T ■ Typical Characterisitics Static Characteristic 14 COMMON EMITTER Ta=25℃ 70uA 63uA 10 DC CURRENT GAIN COLLECTOR CURRENT o Ta=100 C 250 49uA 42uA 8 VCE= 1V hFE 56uA IC (mA) 12 hFE —— IC 300 35uA 6 28uA 21uA 4 14uA 2 200 150 o Ta=25 C 100 50 IB=7uA 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 COLLECTOR-EMITTER VOLTAGE VCE 3.5 0 0.1 4.0 VBEsat —— IC 1.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ 0.6 Ta=100℃ 0.4 10 VCEsat —— 400 β=10 0.8 1 COLLECTOR CURRENT (V) IC 100 (mA) 200 IC β=10 300 200 Ta=100℃ 100 Ta=25℃ 0.2 0.1 1 10 COLLECTOR CURRENT 100 IC 0 200 COLLECTOR POWER DISSIPATION Pc (mW) IC (mA) COLLECTOR CURRENT o Ta=100 C 10 Ta=25℃ 1 0.5 0.6 0.7 BASE-EMITTER VOLTAGE www.slkormicro.com 0.8 100 0.9 —— IC 200 (mA) Ta 175 150 125 100 75 50 25 VCE=1V 0.4 Pc 200 100 0.1 0.3 10 COLLECTOR CURRENT IC—— VBE 200 1 (mA) 0 1.0 0 25 50 75 AMBIENT TEMPERATURE VBE(V) 3 125 100 Ta (℃) 150 SL3904T ■ SOT-523 D E B A X HE v M A 3 Q A 1 A1 2 e1 bp c w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 www.slkormicro.com 4