SL3906T

SL3906T PNP Switching Transistor 3 2 ■ Features 1 ● Epitaxial Planar Die Construction ■ Simplified outline(SOT-523) ● Also Available in Lead Free Version ● Complementary to SL3904T ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -200 mA Collector Power Dissipation PC 150 mW RθJA 833 °C/W Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range www.slkormicro.com 1.Base 2.Emitter 3.Collector TJ 150 Tstg -55 to 150 1 Unit V ℃ SL3906T ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE= 0 -40 Typ Max V Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB= 0 -40 Emitter - base breakdown voltage VEBO IE= -100μA， IC= 0 -5 Collector-base cut-off current ICBO VCB= -30 V , IE= 0 -100 Collector cut-off current ICEX VCB=-30V,VBE(off)= 3V -50 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 IC=-10 mA, IB=-1mA -0.25 Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Delay time VCE(sat) VBE(sat) IC= -50 mA, IB= -5mA IC=-10 mA, IB=-1mA -0.4 -0.65 IC= -50 mA, IB= -5mA hFE(1) VCE= -10V, IC=- 0.1mA 60 VCE= -10V, IC= -1mA 80 hFE(3) VCE= -10V, IC=- 10mA 100 hFE(4) VCE= -10V, IC= -50mA 60 hFE(5) VCE= -10V, IC= -100mA 30 Rise time tr Storage time ts Fall time tf -0.85 35 VCC=-3V, VBE(OFF)= 0.5V IC=-10mA , IB1=-1mA 35 225 VCC=-3V, IC=-10mA, IB1=IB2=-1mA NF VCE=-5V,Ic= - 0.1mA 4 Cib VEB= -0.5V, IE= 0,f=1MHz 10 Collector output capacitance Cob VCB= -5V, IE= 0,f=1MHz 4.5 www.slkormicro.com VCE= -20V, IC= -10mA,f=100MHz 2 nS 75 Noise figure fT V 300 Collector input capacitance Transition frequency nA -0.95 hFE(2) td Unit 250 dB pF MHz SL3906T ■ Typical Characterisitics Static Characteristic -80 hFE 200 DC CURRENT GAIN COLLECTOR CURRENT IC COMMON EMITTER VCE=-1V -350uA -300uA -250uA -200uA -40 —— Ta=100℃ -400uA -60 hFE 300 COMMON EMITTER Ta=25℃ -500uA -450uA IC (mA) -100 -150uA Ta=25℃ 100 -100uA -20 IB=-50uA 0 -0.1 -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE -20 -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -30 IC -200 (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -10 β=10 -0.0 -10 -3 -1 COLLECTOR CURRENT IC -100 -100 -30 IC -200 -1 -10 -3 (mA) -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/IC=0 -30 Ta=25℃ Cob (pF) Ta=100℃ Cib C -10 CAPACITANCE IC (mA) COMMON EMITTER VCE=-1V COLLECTOR CURRENT -200 (mA) -3 Ta=25℃ -1 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 1 -0.1 -1.2 fT 600 —— IC -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMMITER VOLTAGE VBE (V) PC 250 —— -10 -20 (V) Ta VCE=-20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 400 200 200 150 100 50 0 -1 -3 -10 COLLECTOR CURRENT www.slkormicro.com -30 IC 0 -50 (mA) 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 (℃ ) 150 SL3906T ■ SOT-523 D E B A X HE v M A 3 Q A 1 A1 2 e1 bp c w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 www.slkormicro.com 4