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ESD5B5.0ST1G-P

ESD5B5.0ST1G-P

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    SOD-523(SC-79)

  • 描述:

    ESD抑制器/TVS二极管 SOD523 10V

  • 详情介绍
  • 数据手册
  • 价格&库存
ESD5B5.0ST1G-P 数据手册
ESD5B5.0ST1G-P Bi -directional TVS Diode WWW.SOT23.COM.TW Features Mechanical Characteristics  Protects one data or power line  Package: SOD-523  Ultra low leakage: nA level  Lead Finish: Matte Tin  Low operating voltage: 5V  Case Material: “Green” Molding Compound.  Low clamping voltage  UL Flammability Classification Rating 94V-0  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns)  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below  Shipping Qty : 3000pcs/7InchTape & Reel  Cellular Handsets & Accessories Digital Visual Interface (DVI) Display Port MDDI Ports USB Ports PCI Express Serial ATA BL    IC Applications RoHS Compliant  CH PU   TE  Dimensions and Pin Configuration Marking:B5 WWW.TECHPUBLIC.COM.TW ESD5B5.0ST1G-P Bi -directional TVS Diode WWW.SOT23.COM.TW Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 80 W Peak Pulse Current (8/20µs) IPP 8 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range TJ −55 to +125 °C Tstg −55 to +150 °C IC Storage Temperature Range kV ±30 Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Nominal Reverse Working Voltage IR Reverse Leakage Current @ VRWM VBR Reverse Breakdown Voltage @ IT PU VRWM Test Current for Reverse Breakdown VC Clamping Voltage @ IPP IPP Maximum Peak Pulse Current f VC VBR VRWM IT IR IR IT VRWM VBR VC V Parasitic Capacitance Reverse Voltage TE VR I IPP CH IT CESD BL Symbol IPP Small Signal Frequency Parameter Reverse Working Voltage Breakdown Voltage Symbol Bi-Directional TVS Min VRWM VBR 6 Typ Max Unit Test Condition 5 V 8 V IT = 1mA Reverse Leakage Current IR 0.2 μA VRWM = 5V Clamping Voltage VC 8 V IPP = 1A Clamping Voltage VC 10 V IPP = 8A Junction Capacitance CJ 20 pF VR = 0V, f = 1MHz WWW.TECHPUBLIC.COM.TW ESD5B5.0ST1G-P Bi -directional TVS Diode WWW.SOT23.COM.TW Typical Performance Characteristics (TA=25°C unless otherwise Specified) Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 30 t - Time ( s) Power Derating Curve tr = 0.7~1ns Time (ns) 30ns 60ns CH 110 100 90 80 70 60 50 40 30 20 10 0 TE % of Rated Power 10% PU Fig3. IC 80 90% BL IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP Percent of Peak Pulse Current % tr 0 25 50 75 100 125 150 Ambient Temperature –TA (ºC) WWW.TECHPUBLIC.COM.TW ESD5B5.0ST1G-P Bi -directional TVS Diode WWW.SOT23.COM.TW Outline Drawing - SOD-523 SOD-523 A Millimeters 1 2 C K Max Min Max A 1.10 1.30 0.043 0.051 B 0.70 0.90 0.028 0.035 C 0.50 0.70 0.020 0.028 D 0.25 0.35 0.010 0.014 J 0.07 0.20 K 0.15 0.25 0.006 0.010 S 1.50 1.70 0.059 S 0.067 0.0028 0.0079 PU J Min BL D DIM IC B Inches CH Land Pattern - SOD-523 TE Recommended Mounting Pad Layout 1.40 0.0547 0.40 0.0157 0.40 0.0157 Dimensions in ( millimeters ) inches WWW.TECHPUBLIC.COM.TW
ESD5B5.0ST1G-P
物料型号为ESD5B5.0ST1G-P,是一款双向TVS二极管。

器件简介包括保护数据线或电源线、超低漏电流、低工作电压、低钳位电压,符合IEC 61000-4-2和IEC61000-4-4标准,并且符合RoHS标准。


引脚分配如下: - A:阳极 - K:阴极

参数特性包括: - 反向工作电压:5V - 反向击穿电压:6至8V - 反向漏电流:0.2μA - 钳位电压:8V(1A脉冲电流时)和10V(8A脉冲电流时) - 钳位电压下的峰值脉冲电流:8A - 寄生电容:20pF

功能详解为保护数据线或电源线免受静电放电(ESD)和电气快速瞬变(EFT)的损害。


应用信息包括显示端口、串行ATA、手机及其配件、数字视觉接口(DVI)、MDDI端口、USB端口和PCI Express。


封装信息为SOD-523,引脚镀层为雾锡,外壳材料为“绿色”塑封料,UL阻燃等级为94V-0,湿度敏感等级为J-STD-020标准的3级,终端连接见下图,包装为3000pcs/7英寸胶带和卷轴。
ESD5B5.0ST1G-P 价格&库存

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ESD5B5.0ST1G-P
  •  国内价格
  • 1+0.07535
  • 30+0.07260
  • 100+0.06710
  • 500+0.06160
  • 1000+0.05885

库存:2705

ESD5B5.0ST1G-P
    •  国内价格
    • 20+0.14537
    • 200+0.11729
    • 600+0.10174
    • 3000+0.08241
    • 9000+0.07431
    • 21000+0.06988

    库存:29719

    ESD5B5.0ST1G-P
    •  国内价格
    • 1+0.14100

    库存:85