WSD40P10DN56

WSD40P10DN56 P-Ch MOSFET Product Summery General Description The WSD40P10DN56 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -100V 78mΩ -30A Applications The WSD40P10DN56 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN5X6_8L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage -100 V Gate-Source Voltage ±20 V -30 A -15 A -75 A 1 Continuous Drain Current, -VGS @ -10V 1 Continuous Drain Current, -VGS @ -10V Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy 157 mJ IAS Avalanche Current -18.9 A 3 4 PD@TC=25℃ Total Power Dissipation 54 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 2.3 ℃/W www.winsok.tw Typ. Page 1 Rev 3: Apr.2019 WSD40P10DN56 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) 2 Static Drain-Source On-Resistance Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Min. Typ. Max. Unit VGS=0V , ID=-250uA -100 --- --- V Reference to 25℃ , ID=-1mA --- -0.021 --- V/℃ VGS=-10V , ID=-10A --- 78 -1.2 -1.7 VGS=VDS , ID =-250uA 95 -2.5 mΩ V --- 4.08 --- VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-10A --- 24 --- S Qg Total Gate Charge (-4.5V) --- 44 --- Qgs Gate-Source Charge --- 9 --- Qgd Gate-Drain Charge --- 6 --- Turn-On Delay Time --- 12 --- --- 27 --- --- 79 --- Fall Time --- 53 --- Ciss Input Capacitance --- 3029 --- Coss Output Capacitance --- 129 --- Crss Reverse Transfer Capacitance --- 76 --- Min. Typ. Max. Unit 100 --- --- mJ Min. Typ. Max. Unit --- --- -18 A --- --- -1.2 V Td(on) Tr Td(off) Tf VDS=-50V , VGS=-10V , ID=-20A Rise Time VDD=-30V , VGS=-10V , Turn-Off Delay Time RG=6Ω, ID=-10A ,RG=30Ω. VDS=-30V , VGS=0V , f=1MHz mV/℃ uA nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-10A Diode Characteristics Symbol IS VSD Parameter Conditions 1,6 Continuous Source Current Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.5mH,IAS=-10A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 3: Apr.2019 WSD40P10DN56 P-Ch MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage 12 -IS Source Current(A) 10 8 6 TJ=25℃ TJ=150℃ 4 2 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Typical S-D Diode Forward Voltage Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance Normalized -VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) vs TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs TJ Page 3 Rev 3: Apr.2019 WSD40P10DN56 P-Ch MOSFET Fig.7 Capacitance Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Waveform Page 4 Rev 3: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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