WSD45P10DN56

WSD45P10DN56 P-Ch MOSFET Description The WSF45P10DN56 uses advanced trench BVDSS RDS(ON) ID technology and design to provide excellent -100V 62 mΩ -27.5A RDS(ON) with low gate charge. It can be used Application in a wide variety of applications. ● Portable equipment and battery Features powered systems ● Super high dense cell design DFN5X6-8 Pin Configuration ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Absolute Maximum Ratings @TA=25℃ unless otherwise noted Symbol Parameter Ratings Unit VDSS Drain-Source Voltage -100 V VGSS Gate-Source Voltage ±20 V TC=25°C -27.5 A TC=100°C -17.4 ID Drain Current (Continuous) *C IDM Drain Current (Pulse) *B PD Power Dissipation TJ/TSTG TC=25°C Operating Temperature/ Storage Temperature -110 A 104 W -55~150 ℃ Maximum Unit 1.2 °C/W Thermal Resistance Ratings Symbol RthJC www.winsok.tw Parameter Maximum Junction-to-Case (Drain) *A Page 1 Steady State Rev1.0 Jan.2021 WSD45P10DN56 P-Ch MOSFET Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID= -250μA -100 -- -- V IDSS Zero Gate Voltage Drain Current VDS = -80V, VGS = 0V -- -- -1 μA Gate Threshold Voltage VGS = VDS, IDS= -250μA -1 -- -2.5 V Gate Leakage Current VGS= 　20V, VDS=0V -- -- 　100 nA VGS = -10V, ID = -20A -- 62 81 mΩ VGS = -6V, ID = -15A -- 65 84.5 mΩ VGS = -4.5V, ID = -15A -- 70 91 mΩ Diode Forward Voltage ISD= -1A , VGS=0V -- -- -1.2 V IS Diode Forward Current *C TC =25°C -- -- -27.5 A Qg Total Gate Charge -- 75 -- nC Qgs Gate-Source Charge -- 9 -- nC Qgd Gate-Drain Charge -- 18 -- nC td ( on ) Turn-on Delay Time -- 17 -- ns -- 6 -- ns -- 75 -- ns -- 10 -- ns -- 2590 -- pF -- 320 -- pF -- 45 -- pF VGS(TH) IGSS RDS(on) RDS(on) Drain-Source On-state Resistance RDS(on) VSD tr Turn-on Rise Time td( off ) Turn-off Delay Time tf Turn-Off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=-10V, VDS=-80V, ID=-18A VGS=-10V, VDS=-50V, ID=-18A， RG=3.3R　 VDS=-50V, VGS=0V, f=1.0MHz Note: A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. D: Pulse Test：Pulse Wide≤ 300μs，Duty Cycle≤ 2%. www.winsok.tw Page 2 Rev1.0 Jan.2021 WSD45P10DN56 P-Ch MOSFET Typical Performance Characteristics（(TJ = 25 °C, unless otherwise noted)） www.winsok.tw Page 3 Rev1.0 Jan.2021 WSD45P10DN56 P-Ch MOSFET www.winsok.tw Page 4 Rev1.0 Jan.2021 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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