WST2088A

WST2088A N-Ch MOSFET Product Summery General Description The WST2088A is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS 20V RDSON ID 10.7mΩ 7.5A Applications The WST2088A meet the RoHS and Green Product requirement with full function reliability approved. ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Features SOT-23-3L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID@Tc=25℃ Continuous Drain Current, VGS @ 4.5V 7.5 A ID@Tc=70℃ Continuous Drain Current, VGS @ 4.5V 4.5 A IDP Pulsed Drain Current 24 A PD@TA=25℃ Total Power Dissipation 1.25 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Rthj-c www.winsok.tw Parameter Typ. Maximum Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-case Page 1 --- Max. 100 Unit ℃/W --- 8 ℃/W Rev:1.0 May.2019 WST2088A N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.018 --- V/℃ --- 10.7 14 VGS=2.5V , ID=5A --- 12.8 17 VGS=4.5V , ID=6A mΩ VGS=VDS , ID =250uA 0.4 0.63 1.2 IDSS Drain-Source Leakage Current VDS=16V , VGS=0V. --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA Qg Total Gate Charge --- 10 --- Qgs Gate-Source Charge --- 1.6 --- Qgd Gate-Drain Charge --- 3.4 --- Turn-On Delay Time --- 8 --- VGS(th) Td(on) Tr Td(off) Tf Ciss Gate Threshold Voltage VDS=15V , VGS=4.5V , ID=6A V nC Rise Time VDS=10V , VGS=4.5V , --- 15 --- Turn-Off Delay Time RG=3.3Ω ID=1A --- 33 --- --- 13 --- --- 590 --- --- 125 --- --- 90 --- Min. Typ. Max. Unit --- --- 1.2 V --- --- --- nS --- --- --- nC Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VGS=0V , IS=1A IF=1A , VGS=0V, dI/dt=100A/µs A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.winsok.tw Page 2 Rev:1.0 May.2019 WST2088A N-Ch MOSFET Typical Characteristics www.winsok.tw Page 3 Rev:1.0 May.2019 WST2088A N-Ch MOSFET www.winsok.tw Page 4 Rev:1.0 May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.