WSD2018BDN22

WSD2018BDN22 N-Ch MOSFET General Description The WSD2018BDN22 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSD2018BDN22 meet the RoHS and Green Product requirement with full function reliability approved. Product Summery BVDSS RDSON 12V 11.5mΩ(MAX) ID 12.3A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology DFNWB2×2-6L-J Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings @TA=25℃ unless otherwise noted Symbol Parameter Ratings Unit VDSS Drain-Source Voltage 12 V VGSS Gate-Source Voltage ±8 V TA=25°C 12.3 A TA=70°C 9.8 A ID Drain Current (Continuous) *C IDM Drain Current (Pulse) *B 49 A PD Power Dissipation TA=25°C 2.8 W -55~150 ℃ TJ/TSTG Operating Temperature/ Storage Temperature Thermal Resistance Ratings Symbol RthJA Parameter t ≤ 10 s Maximum Junction-to-Ambient *A www.winsok.tw Page 1 Maximum Unit 45 °C/W Rev1.0 May.2021 WSD2018BDN22 N-Ch MOSFET Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID= 250μA 12 --- --- V IDSS Zero Gate Voltage Drain Current VDS = 10V, VGS = 0V --- --- 1 μA Gate Threshold Voltage VGS = VDS, IDS= 250μA 0.4 --- 1 V Gate Leakage Current VGS= ±8V, VDS=0V --- --- ±100 nA VGS = 4.5V, ID = 8A --- 8.6 11.5 mΩ VGS = 2.5V, ID = 4A --- 12 18 mΩ Diode Forward Voltage ISD= 1A , VGS=0V --- --- 1 V Diode Forward Current *C TA =25°C --- --- 2.8 A --- 8.5 --- nC --- 1.5 --- nC Static *D VGS(TH) IGSS RDS(on) Drain-Source On-state Resistance RDS(on) VSD IS Switching Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 2.2 --- nC td ( on ) Turn-on Delay Time --- 8 --- ns tr Turn-on Rise Time --- 5 --- ns td( off ) Turn-off Delay Time --- 14 --- ns Turn-Off Fall Time --- 12 --- ns Ciss Input Capacitance --- 850 --- pF Coss Output Capacitance --- 180 --- pF Crss Reverse Transfer Capacitance --- 95 --- pF tf VGS=4.5V, VDS=6V, ID=6.5A VGS=4.5V, VDS=10V, RL=1.5　, RGEN=3　 Dynamic VGS=0V, VDS= 6V, f=1MHz A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating, package limited 8A. D: Pulse Test：Pulse Wide≤ 300μs，Duty Cycle≤ 2%. www.winsok.tw Page 2 Rev1.0 May.2021 WSD2018BDN22 N-Ch MOSFET Typical Characteristics www.winsok.tw Page 3 Rev1.0 May.2021 WSD2018BDN22 N-Ch MOSFET www.winsok.tw Page 4 Rev1.0 May.2021 WSD2018BDN22 N-Ch MOSFET DFNWB2X2-6L-J Package Outline Dimensions Symbol A A1 A3 D E D1 E1 D2 E2 k b e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 1.924 2.076 1.924 2.076 0.800 1.000 0.850 1.050 0.200 0.400 0.460 0.660 0.200MIN. 0.250 0.350 0.650TYP. 0.174 0.326 Dimensions In Inches Min. Max. 0.032 0.000 0.002 0.008REF. 0.076 0.082 0.076 0.082 0.031 0.039 0.033 0.041 0.008 0.016 0.018 0.026 0.008MIN. 0.010 0.014 0.026TYP. 0.007 0.013 DFNWB2X2-6L-J Suggested Pad Layout www.winsok.tw Page 5 Rev1.0 May.2021 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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