WSD2018ADN22

WSD2018ADN22 N-Ch MOSFET Product Summery General Description The WSD2016ADN22 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 9.5mΩ 11A Applications The WSD2016ADN22 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features DFNWB2×2-6L-J Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±10 V 1 11 A 1 9.5 A 40 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 2.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 167 ℃/W --- 65 ℃/W Rev1.0 May.2019 WSD2018ADN22 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) 2 Static Drain-Source On-Resistance Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.027 --- V/℃ VGS=4.5V , ID=5A --- 9.5 12 VGS=2.5V , ID=5A --- 11 14 14.5 18 0.4 0.7 1.0 V mV/℃ VGS=1.8V , ID=5A VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- 2.56 --- VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=4V , ID=9.7A 20 --- --- S Rg Gate Resistance f=1MHz --- 2.5 --- Ω Qg Total Gate Charge (4.5V) --- 16 32 Qgs Gate-Source Charge --- 1.3 --- Qgd Gate-Drain Charge --- 1.6 --- VDS=4V , VGS=5V , ID=10A --- 16 20 Rise Time VDD=4V , VGS=4.5V , RG=1Ω --- 25 45 Turn-Off Delay Time ID=10A ,RL=0.4Ω --- 124 150 Fall Time --- 101 120 Ciss Input Capacitance --- 1177 --- Coss Output Capacitance --- 157 --- Crss Reverse Transfer Capacitance --- 138 --- Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=4V , VGS=0V , f=1MHz nC ns pF Notes : 1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper. 2.Surface mounted on FR4 board using the minimum pad size,1oz copper. 3. Pulse test : Pulse width=300μs, duty cycle≤2%. 4. These parameters have no way to verify. www.winsok.tw Page 2 Rev1.0 May.2019 WSD2018ADN22 N-Ch MOSFET Typical Characteristics TYPICAL CHARACTERISTIC CURVES Fig.1 On-Region Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction temperature Fig.5 On-Resistance Variation with VGS Fig.6 Body Diode Characteristics www.winsok.tw Page 3 Rev1.0 May.2019 WSD2018ADN22 N-Ch MOSFET TYPICAL CHARACTERISTIC CURVES Fig.7 Gate-Charge Characteristics Fig.9 Threshold Voltage Variation with Temperature www.winsok.tw Fig.8 Breakdown Voltage Variation vs. Temperature Fig.10 Capacitance vs. Drain-Source Voltage Page 4 Rev1.0 May.2019 Outline Dimensions DFNWB2X2-6L-J Package Symbol A A1 A3 D E D1 E1 D2 E2 k b e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 1.924 2.076 1.924 2.076 0.800 1.000 0.850 1.050 0.200 0.400 0.460 0.660 0.200MIN. 0.250 0.350 0.650TYP. 0.174 0.326 Dimensions In Inches Min. Max. 0.032 0.000 0.002 0.008REF. 0.076 0.082 0.076 0.082 0.031 0.039 0.033 0.041 0.008 0.016 0.018 0.026 0.008MIN. 0.010 0.014 0.026TYP. 0.007 0.013 DFNWB2X2-6L-J Suggested Pad Layout www.winsok.tw Page 5 Rev1.0 May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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