WSD2090DN56

WSD2090DN56 N-Ch MOSFET General Description Product Summery The WSD2090DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 20V 2.8mΩ 80A Applications The WSD2090DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z Switch z Power System z Load Switch Features DFN5X6-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 80 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 59 A IDM Pulsed Drain Current note1 360 A EAS Single Pulsed Avalanche Energy note2 110 mJ Power Dissipation 81 W RθJA Thermal Resistance, Junction to Case 65 ℃/W RθJC Thermal Resistance Junction-Case 1 4 ℃/W -55 to +175 ℃ PD TJ, TSTG www.winsok.tw Operating and Storage Temperature Range Page 1 Rev1.0 May.2021 WSD2090DN56 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Min Typ Max Units VGS=0V, ID=250μA 20 24 --- V Reference to 25℃ , ID=1mA --- 0.018 --- V/℃ 0.50 0.65 1.0 V Gate Threshold Voltage VDS= VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=30A --- 2.8 4.0 RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=20A --- 4.0 6.0 IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V --- --- 1 μA IGSS Gate-Body Leakage Current VGS=±10V, VDS=0V --- --- ±100 nA --- 3200 --- --- 460 --- VGS(th) mΩ Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance --- 446 --- Qg Total Gate Charge --- 11.05 --- Qgs Gate-Source Charge --- 1.73 --- Qgd Gate-Drain Charge --- 3.1 --- tD(on) Turn-on Delay Time --- 9.7 --- tr Turn-on Rise Time --- 37 --- tD(off) Turn-off Delay Time --- 63 --- --- 52 --- --- --- 1.2 tf VSD VDS=10V,VGS=0V,f=1MHZ VGS=4.5V,VDS=10V,ID=30A VGS=4.5V, VDS=10V, ID=30A RGEN=1.8Ω Turn-off fall Time Diode Forward Voltage IS=7.6A,VGS=0V pF nC ns V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 5、EAS condition: TJ=25℃, VDD=15V, VG=4.5V, RG=25Ω, L=0.5mH, IAS=21A www.winsok.tw Page 2 Rev1.0 May.2021 WSD2090DN56 N-Ch MOSFET Typical Characteristics Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode Characteristics Figure 5: Gate Charge Characteristics www.winsok.tw Figure 6: Capacitance Characteristics Page 3 Rev1.0 May.2021 WSD2090DN56 N-Ch MOSFET Figure 7: Normalized Breakdown Voltage vs Junction Temperature Figure 9: Maximum Safe Operating Area Figure 8: Normalized on Resistance vs. Junction Temperature Figure 10: Maximum Continuous Drain Current vs. Ambient Temperature Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambien www.winsok.tw Page 4 Rev1.0 May.2021 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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