WSD50P10ADN56

WSD50P10ADN56 P-Ch MOSFET Product Summery General Description The WSD50P10ADN56 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -100V 62mΩ -40A Applications The WSD50P10ADN56 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN5X6_8L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage -100 V Gate-Source Voltage ±20 -40 V -27 A -110 A 1 Continuous Drain Current, -VGS @ -10V 1 Continuous Drain Current, -VGS @ -10V Pulsed Drain Current 2 A EAS Single Pulse Avalanche Energy 157 mJ IAS Avalanche Current -18.9 A 104 W 3 4 PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 1.2 ℃/W www.winsok.tw Typ. Page 1 Rev 3: Apr.2019 WSD50P10ADN56 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) 2 Static Drain-Source On-Resistance Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Min. Typ. Max. Unit VGS=0V , ID=-250uA -100 --- --- V Reference to 25℃ , ID=-1mA --- -0.021 --- V/℃ VGS=-10V , ID=-20A --- 62 -1.2 --- VGS=VDS , ID =-250uA 81 mΩ -2.5 V --- 4.08 --- VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-10A --- 24 --- S Qg Total Gate Charge (-4.5V) --- 75 --- Qgs Gate-Source Charge --- 9 --- Qgd Gate-Drain Charge --- 18 --- Turn-On Delay Time --- 17 --- --- 6 --- --- 75 --- Fall Time --- 10 --- Ciss Input Capacitance --- 2590 --- Coss Output Capacitance --- 320 --- Crss Reverse Transfer Capacitance --- 45 --- Min. Typ. Max. Unit 100 --- --- mJ Min. Typ. Max. Unit --- --- -40 A --- --- -1.2 V Td(on) Tr Td(off) Tf VDS=-50V , VGS=-10V , ID=-18A Rise Time VDD=-30V , VGS=-10V , Turn-Off Delay Time RG=6Ω, ID=-18A ,RG=30Ω. VDS=-30V , VGS=0V , f=1MHz mV/℃ uA nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-10A Diode Characteristics Symbol IS VSD Parameter Conditions 1,6 Continuous Source Current Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. D: Pulse Test：Pulse Wide≤ 300μs，Duty Cycle≤ 2%. www.winsok.tw Page 2 Rev 3: Apr.2019 WSD50P10ADN56 P-Ch MOSFET Typical Characteristics www.winsok.tw Page 3 Rev 3: Apr.2019 WSD50P10ADN56 P-Ch MOSFET www.winsok.tw Page 4 Rev 3: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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