WSF50N10G

WSF50N10G N-Ch MOSFET Description Product Summery BVDSS The uses advanced SGT technology 100V to provide excellent RDS(ON), low gate charge and RDSON ID 13.8mΩ 40A operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or TO-252 Pin Configuration in other Switching application. Application Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain source voltage 100 V VGS Gate source voltage ±20 V ID ID, pulse PD EAS Tstg，Tj Continuous drain current1) TC=25 ℃ 40 A Pulsed drain current2) TC=25 ℃ 120 A Power dissipation3) TC=25 ℃ 71 W 57 mJ -55 to 150 ℃ 1.76 ℃/W 62 °C/W Single pulsed avalanche energy5) Operation and storage temperature RθJC Thermal resistance, junction-case RθJA Thermal resistance, junction-ambient4) www.winsok.tw Page 1 Rev1.0 Jan.2021 WSF50N10G N-Ch MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Test condition Min. Typ. Max. Unit BVDSS Drain-source breakdown voltage VGS=0 V, ID=250 μA 100 107 - V VGS(th) Gate threshold voltage VDS=VGS, ID=250 μA 1.2 1.5 2.5 V RDS(ON) Drain-source on-state resistance VGS=10 V, ID=10 A - 13.8 20.0 mΩ RDS(ON) Drain-source on-state resistance VGS=4.5 V, ID=7 A - 17.4 26.0 mΩ IGSS Gate-source leakage current VGS=±20 V - - ±100 nA IDSS Drain-source leakage current VDS=100 V, VGS=0 V - - 1 uA Ciss Input capacitance - 1003.9 - pF Coss Output capacitance - 185.4 - pF Crss Reverse transfer capacitance - 9.8 - pF td(on) Turn-on delay time - 16.6 - ns - 3.8 - ns - 75.5 - ns Fall time - 46 - ns Qg Total gate charge - 16.2 - nc Qgs Gate-source charge - 2.8 - nc Qgd Gate-drain charge - 4.1 - nc - 3 - V - 30 - A - 90 - A 49 - - ns 61.8 - - nc 2.4 - - A tr td(off) tf Rise time Turn-off delay time Vplateau Gate plateau voltage IS Diode forward current ISP Pulsed source current trr Reverse recovery time Qrr Reverse recovery charge Irrm Peak reverse recovery current VGS=0 V, VDS=50 V, ƒ=100 kHz VGS=10 V, VDS=50 V, RG=10 Ω, ID=5 A ID=5 A, VDS=50V, VGS=10V VGS