WSF35P06

WSF35P06 P-Ch MOSFET Product Summery General Description The WSF35P06 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON -60V 80mΩ ID -13.5A Applications The WSF35P06 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z Brushless motor z Load switch zUninterruptible power supply Features TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage -60 V Gate-Source Voltage ±20 V 1 -13.5 A 1 -8.3 A -26 A Continuous Drain Current, -VGS @ -10V Continuous Drain Current, -VGS @ -10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 29.8 mJ IAS Avalanche Current -24.4 A 4 PD@TC=25℃ Total Power Dissipation 31.3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 62 ℃/W --- 4 ℃/W Rev 2: May.2019 WSF35P06 P-Ch MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.012 --- V/℃ VGS=-10V , ID=-3A --- 80 90 VGS=-4.5V , ID=-2A --- 100 150 -1.2 -1.75 -2.5 V --- 4.32 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA VGS(th) Temperature Coefficient mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 16 Ω Qg Total Gate Charge (-4.5V) --- 12.4 --- Qgs Gate-Source Charge --- 2.2 --- Qgd Gate-Drain Charge --- 6.3 --- VDS=-20V , VGS=-4.5V , ID=-3A nC --- 9.2 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 20.1 --- Turn-Off Delay Time ID=-1A --- 46.7 --- Fall Time --- 9.4 --- Ciss Input Capacitance --- 1137 --- Coss Output Capacitance --- 76 --- Crss Reverse Transfer Capacitance --- 50 --- Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit --- --- -13 A --- --- -1.2 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-24A Diode Characteristics Symbol IS VSD Parameter Conditions 1,6 Continuous Source Current Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,IAS =-24A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 2: May.2019 WSF35P06 P-Ch MOSFET P-Channel Typical Characteristics 80 10 ID=-3A VGS=-10V -ID Drain Current (A) 8 75 RDSON (mΩ) VGS=-7V VGS=-5V 6 VGS=-4.5V 70 4 VGS=-3V 65 2 0 60 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 2 2 Fig.1 Typical Output Characteristics 4 6 8 -VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 12 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=25℃ TJ=150℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-1A 8 6 4 2 0 0 1 7 14 21 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse 2.2 Normalized On Resistance 1.5 Normalized VGS(th) 1.8 1 1.4 1.0 0.5 0.6 0.2 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) v.s TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ Page 3 Rev 2: May.2019 WSF35P06 P-Ch MOSFET 10000 100.00 F=1.0MHz Capacitance (pF) 100us 10.00 Ciss 1ms 1000 -ID (A) 10ms 1.00 100ms DC Coss 100 0.10 Crss Tc=25o C Single Pulse 10 0.01 1 5 9 13 17 21 -VDS , Drain to Source Voltage(V) 25 0.1 1 10 100 -VDS (V) 1000 Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev 2: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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