WSF40P06

WSF40P06 P-Ch MOSFET General Description The WSF40P06 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF40P06 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Product Summery BVDSS RDSON ID -60V 62mΩ -17A Applications z Brushless motor z Load switch zUninterruptible power supply Features z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) SYMBOL PARAMETERS/TEST CONDITIONS LIMITS VDS Drain‐Source Voltage -60 VGS Gate‐Source Voltage ±20 ID Continuous Drain Current TC = 25 °C ‐17 TC = 100 °C ‐11 IDM Pulsed Drain Current1 ‐60 IAS Avalanche Current ‐12 EAS Avalanche Energy L = 0.1mH 7.2 EAR Repetitive Avalanche Energy2 L = 0.05mH 3.6 PD Power Dissipation TC = 25 °C 27 TC = 100 °C 8 Tj, Tstg Operating Junction & Storage Temperature Range UNIT V A mJ W ‐55 to 150 °C MAXIMUM UNIT THERMAL RESISTANCE RATINGS SYMBOL THERMAL RESISTANCE RɵJC Junction‐to‐Case 4.5 RɵJA Junction‐to‐Ambient 85 www.winsok.tw Page 1 °C / W Rev1.0 May.2021 WSF40P06 P-Ch MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN TYP MAX UNIT STATIC Drain‐Source Breakdown Voltage VGS = 0V, ID = ‐250μA ‐60 --- --- Gate Threshold Voltage VDS = VGS, ID = ‐250μA ‐1.0 ‐1.8 ‐3.0 IGSS Gate‐Body Leakage VDS = 0V, VGS = ±20V --- --- ±100 VDS = ‐48V, VGS = 0V --- --- ‐1 IDSS Zero Gate Voltage Drain Current VDS = ‐40V, VGS = 0V, TJ = 125 °C --- --- ‐25 VDS = ‐5V, VGS = ‐4.5V ‐17 --- --- VGS = ‐10V, ID = ‐15A --- 55 62 VGS = ‐4.5V, ID = ‐7A --- 75 90 VDS = ‐5V, ID = ‐15A --- 12 --- --- 1485 --- --- 93 --- --- 81 --- --- 7.0 --- --- 25.3 --- --- 3.2 --- V(BR)DSS VGS(th) ID(ON) RDS(ON) gfs On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V nA μA A mΩ S DYNAMIC Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge1,2 VGS = 0V, VDS = ‐25V, f = 1MHz VGS = 15mV, VDS = 0V, f = 1MHz VDS = ‐30V, VGS = ‐10V, ID = ‐10A Qgs Gate‐Source Charge1,2 Qgd Gate‐Drain Charge1,2 --- 4 --- td(on) Turn‐On Delay Time1,2 --- 12 --- --- 24 --- --- 45 --- --- 60 --- tr Rise Time1,2 td(off) tf Turn‐Off Delay Time1,2 VDS = ‐10V, ID = ‐1A, VGS = ‐10V, RGS = 6Ω Fall Time1,2 pF Ω nC nS SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) IS Continuous Current --- --- ‐17 ISM Pulsed Current3 --- --- ‐60 VSD Forward Voltage1 --- --- 1.3 V --- 12 --- nS --- 9 --- nC trr Reverse Recovery Time Qrr Reverse Recovery Charge 1Pulse IF = IS, VGS = 0V IF = ‐5A, dlF/dt = 100A/μS A test : Pulse Width≤300μsec, Duty Cycle≤ 2％. 2Independent of operating temperature. www.winsok.tw Page 2 Rev1.0 May.2021 WSF40P06 P-Ch MOSFET TYPICAL CHARACTERISTICS  On‐Resistance Variation with Drain Current and Gate Voltage On‐Region Characteristics 50 2.5        R         ‐Normalized DS(ON) Drain‐Source On‐Resistance V    = ‐ 10.0V GS 40 ‐I  ‐ Drain Current( A ) D ‐ 8.0V 30 ‐ 7.0V ‐ 6.0V 20 ‐ 5.0V 10 V    = ‐ 4.5 V GS 2 ‐ 5.0 V 1.5 ‐ 6.0 V ‐ 7.0 V ‐ 8.0 V ‐ 10.0 V 1 ‐ 4.5V 0 0 4 6 8 ‐V   ‐ Drain‐Source Voltage( V ) DS 2 0.5 10 20 30 ‐ I   ‐ Drain Current( A ) D 40 0.20 I   = ‐12 A D I   = ‐ 6 A D R        ‐ On‐Resistance(  Ω) DS(ON) 1.3 1.0 0.7 0.15 0.10 T   = 125°C A 0.05 T   = 25°C A 0.4 ‐50 ‐25 0 25 50 75 100 T   ‐ Junction Temperature (°C) J 125 V   = ‐ 10V DS 50 T   = ‐55°C A 25°C 30 125°C 10 0 4.5 2.5 3.5 ‐V   ‐ Gate‐Source Voltage( V ) GS www.winsok.tw 10 Body Diode Forward Voltage Variation with Source Current and Temperature 100 40 20 4 6 8 ‐ V   ‐ Gate‐Source Voltage( V ) GS 2 Transfer Characteristics 60 1.5 0 150 ‐Is ‐ Reverse Drain Current( A )        R        ‐ Normalized DS(on) Drain‐Source On‐Resistance V     = ‐ 10V GS 1.6 ‐I  ‐ Drain Current( A ) D 50 On‐Resistance Variation with Gate‐Source Voltage On‐Resistance Variation with Temperature 1.9 10 0 5.5 10 V    = 0V GS 1 T   = 125°C A 0.1 25°C ‐55°C 0.01 0.001 0 Page 3 0.2 0.8 1.0 1.2 0.4 0.6 ‐V   ‐ Body Diode Forward Voltage( V ) SD 1.4 Rev1.0 May.2021 WSF40P06 P-Ch MOSFET Gate Charge Characteristics 10 Capacitance Characteristics 2500 8 V     = ‐ 15V DS Capacitance( pF ) ‐ 30V 6 4 Ciss 1500 1000 500 2 Coss 0 Crss 0 0 10 20 Q   ‐ Gate Charge( nC ) g 30 40 it Lim  N  )    D S ( O   R 1ms 10ms 100ms 1s 10s DC   V   = ‐10V GS Single Pulse R     = 4.5°C/W JC T   = 25°C C 1 60 Single Pulse Maximum Power Dissipation 50 100μs 10 30 45 15 ‐ V   , Drain‐Source Voltage( V ) DS 0 Maximum Safe Operating Area 80 ‐I   ‐ Drain Current(A) D f = 1 MHz V   = 0 V GS 2000 P(pk),Peak Transient Power(W) ‐ V    ‐ Gate‐Source Voltage( V ) GS I   = ‐ 12A D Single Pulse R    = 4.5°C/W θJC T  = 25°C C 40 30 20 10 0 0 1 10 ‐V    ‐ Drain‐Source Voltage( V ) DS 100 0.001 0.01 0.1 t  ,Time (sec) 1 1 10 100 Effective Transient Thermal Impedance 1 Normalized Thermal Response(R    ) thjc Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM t1 0.02 t2 1.Duty Cycle,D = t1 t2 2.R     =4.5°C/W θJC 0.01 3.T  ‐  T   = P * R    (t) J C θJC Single Pulse 4.R     (t)=r(t) * R θJC θJC 0.01 0.00001 www.winsok.tw 0.0001 0.001 t  , Pulse Width(s) 1 0.01 Page 4 0.1 1 Rev1.0 May.2021 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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