BAW56

BAW56 Silicon Epitaxial Planar Switching Diode 627 )HDWXUHV  Low forward voltage  Fast reverse recovery time  Small total capacitance (TXLYDOHQW&LUFXLW 1.Cathode1 2.Cathode2 3.Anode1、 Anode2 3.Anode1、 Anode2 Marking Code : AW1 1.Cathode1 2.Cathode2 $EVROXWH0D[LPXP5DWLQJV7$ ℃ Parameter Symbol Value Unit VR 70 V Average Rectified Forward Current IF(AV) 200 mA Non-Repetitive Peak Forward Surge Current IFSM 2 A Maximum Power Dissipation PD 225 mW Junction Temperature TJ 150 °C TSTG -55 to +150 °C Reverse Voltage Storage Temperature Range (OHFWULFDO&KDUDFWHULVWLFV7$ ℃ Parameter Symbol Typ. Max. Unit -- 0.715 -- 0.855 at IF = 50 mA -- 1 at IF = 150 mA -- 1.25 V(BR)R 70 -- V IR -- 2.5 μA Cj -- 1.5 pF Trr -- 6 nS Forward Voltage at IF = 1 mA at IF = 10 mA Reverse Breakdown Voltage at IR = 100 µA Reverse Current at VR = 70 V Typical Junction Capacitance at VR = 0 V, f = 1 MHz Maximum Reverse Recovery Time at IF = IR =10 mA, IRR = 0.1×IR, RL = 100Ω www.pingjingsemi.com Revision：2.0 Jun-2021 VF V  BAW56 Silicon Epitaxial Planar Switching Diode Typical Characteristic Curves 10000 200 Pulsed Pulsed 100 Ta=100C Reverse Current IR (nA) a C =1 00  C 10 T a =2 5 T Forward Current IF (mA) 1000 1 100 Ta=25C 10 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 1.1 0 20 Forward Voltage VF (V) 40 60 80 100 Reverse Voltage VR (V) 1.4 400 Ta=25C 1.3 Power Dissipation PD (mW) Capacitance Between Terminals CT (pF) f=1MHz 1.2 1.1 1.0 0 4 8 12 Reverse Voltage VR (V) www.pingjingsemi.com Revision：2.0 Jun-2021 16 20 300 200 100 0 0 25 50 75 100 125 150 Ambient Temperature TA (℃) 2/3 BAW56 Silicon Epitaxial Planar Switching Diode Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping BAW56 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Jun-2021 3/3