WSP4067B

WSP4067B N&P-Channel MOSFET Product Summery General Description The WSP4067B is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 25mΩ 6.0A -40V 40mΩ -5.1A Applications The WSP4067B meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Power System z Load Switch Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ±20 ±20 V ID@TC=25℃ Continuous Drain Current 6.0 -5.1 A ID@TC=70℃ Continuous Drain Current 3.9 -3.2 A IDM Pulsed Drain Current 24 -20 A PD@TC=25℃ Total Power Dissipation 2 2 W TJ/TSTG Operating Temperature /Storage Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62.5 ℃/W RθJC Thermal Resistance Junction-Case1 --- 50 ℃/W www.winsok.tw Page 1 Rev 2: Apr.2019 WSP4067B N&P-Channel MOSFET N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.067 --- V/℃ VGS=10V , ID=6A --- 25 35 VGS=4.5V , ID=5A --- 40 55 1.0 1.6 2.2 V --- -5.24 --- mV/℃ VDS=32V , VGS=0V , TJ=85℃ --- --- 1 VDS=32V , VGS=0V , TJ=85℃ --- --- 30 VGS=±20V , VDS=0V --- --- ±100 --- 11 --- --- 2 --- --- 2.2 --- --- 1.9 --- --- 18.6 --- --- 8.7 --- Fall Time --- 2.6 --- Ciss Input Capacitance --- 600 --- Coss Output Capacitance --- 62 --- Crss Reverse Transfer Capacitance --- 48 --- Min. Typ. Max. RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Qg Total Gate Charge Qgs Qgd Td(on) Tr Td(off) Tf Gate-Source Charge VGS=VDS , ID =250uA VDS=20V , VGS=10V , ID=6A Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 20 V, VGEN = 10 V, RG = 3.3 Ω, RL = 3.3 Ω, IDS = 6 A . VDS=20V , VGS=0V , f=1MHz mΩ uA nA nC ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current Diode Forward Voltage Conditions TA=25°C. VGS=0V , IS=1A Unit --- --- 2.6 A --- --- 1.3 V A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.winsok.tw Page 2 Rev 2: Apr.2019 WSP4067B N&P-Channel MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf Ciss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. Typ. Max. Unit VGS=0V , ID=-250uA Conditions -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ VGS=-10V , ID=-4A --- 40 50 VGS=-4.5V , ID=-3A --- 55 75 -1.0 -1.6 -2.2 VDS=-32V , VGS=0V , TJ=85℃ --- --- -1 VDS=-32V , VGS=0V , TJ=85℃ --- --- -30 VGS=±20V , VDS=0V --- --- ±100 --- 20 --- --- 5.7 --- --- 4.6 --- --- 6.8 --- --- 33 --- --- 30 --- --- 12 --- --- 1100 --- --- 100 --- --- 80 --- Min. Typ. Max. --- --- -2.6 A --- --- -1.2 V VGS=VDS , ID =-250uA VDS=-20V , VGS=-10V , ID=-5.1A VDD=-20V , VGS=-10V , RG=3.3Ω, ID=-5.1A,RL=3.9Ω. Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-15V , VGS=0V , f=1MHz mΩ V uA nA nC ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current Diode Forward Voltage Conditions TA=25°C. VGS=0V , IS=-1A . Unit A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.winsok.tw Page 3 Rev 2: Apr.2019 WSP4067B N&P-Channel MOSFET N-Channel Typical Characteristics www.winsok.tw Page 4 Rev 2: Apr.2019 WSP4067B N&P-Channel MOSFET www.winsok.tw Page 5 Rev 2: Apr.2019 WSP4067B N&P-Channel MOSFET www.winsok.tw Page 6 Rev 2: Apr.2019 WSP4067B N&P-Channel MOSFET www.winsok.tw Page 7 Rev 2: Apr.2019 WSP4067B N&P-Channel MOSFET www.winsok.tw Page 8 Rev 2: Apr.2019 WSP4067B N&P-Channel MOSFET www.winsok.tw Page 9 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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