WSP4606A

WSP4606A N-Ch and P-Channel MOSFET General Description Product Summery The WSP4606A is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSP4606A meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 22mΩ 6.8A -30V 45mΩ -5.6A Applications z Power management in half bridge and inverters z DC-DC Converter Features z Load Switch z Advanced high cell density Trench technology SOP-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM N-Channel P-Channel 30 -30 V ±20 ±20 V 1 6.8 -5.6 A 1 5.8 -3.9 A 19 -11 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Units 2 3 EAS Single Pulse Avalanche Energy 71 58 mJ IAS Avalanche Current 20 -18 A 4 PD@TC=25℃ Total Power Dissipation 2.5 2.08 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Max. Unit --- 85 ℃/W --- 50 ℃/W Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Rev 2: Apr.2019 WSP4606A N-Ch and P-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ --- 22 35 --- 30 45 1.0 1.5 2.5 V --- -5.8 --- mV/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- 1 VDS=30V , VGS=0V , TJ=55℃ --- --- 5 VGS=10V , ID=6.3A VGS=4.5V , ID=4.5A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=15V , ID=5A --- 20 --- S Rg Gate Resistance VDS=24V , VGS=0V , f=1MHz --- 1.8 --- Ω Qg Total Gate Charge (4.5V) --- 3.5 --- Qgs Gate-Source Charge --- 1.3 --- Qgd Gate-Drain Charge --- 1.7 --- VDS=20V , VGS=4.5V , ID=6A uA nC --- 4.5 --- Rise Time VDD=12V , VGS=10V , RG=3.3Ω --- 2.7 --- Turn-Off Delay Time ID=5A --- 14.9 --- Fall Time --- 2.9 --- Ciss Input Capacitance --- 373 --- Coss Output Capacitance --- 67 --- Crss Reverse Transfer Capacitance --- 41 --- Min. Typ. Max. Unit A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=5A , TJ=25℃ --- --- 2.5 --- --- 64 A --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t