WSP6039

WSP6039 P-Ch MOSFET Product Summery General Description The WSP6039 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -60V 88mΩ -3.5A Applications The WSP6039 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current -3.5 A ID@TC=70℃ Continuous Drain Current -2.5 A IDP Pulsed Drain Current -17.5 A Total Power Dissipation 2.0 W Operating/Storage Temperature Range -55 to 150 ℃ PD@TC=25℃ TJ/TSTG Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- 62 ℃/W RθJC Thermal Resistance Junction-Case --- 4 ℃/W www.winsok.tw Page 1 Rev 2: Apr.2019 WSP6039 P-Ch MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit -60 --- V VGS=-10V , ID=-4A --- 88 --114 VGS=-4.5V , ID=-3A --- 118 153 -1.0 -1.65 -3.0 V = VGS=0V , ID -250uA VGS=VDS , ID =-250uA mΩ IDSS Drain-Source Leakage Current VDS=-60V , VGS=0V --- --- -1 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Qg Total Gate Charge (-4.5V) VDS = -30V, ID = -3.7A, --- 17 --- Qgs Gate-Source Charge VGS = -10V --- 2 --- Qgd Gate-Drain Charge --- 4 --- Td(on) --- 11 --- Rise Time VDD = -30V, ID = -1A, --- 4.5 --- Turn-Off Delay Time VGS = -10V, RGEN = 6 --- 50 --- Fall Time --- 15 --- Ciss Input Capacitance --- 615 --- Coss Output Capacitance --- 140 --- Crss Reverse Transfer Capacitance --- 45 --- Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time nC VDS = -30V, VGS = 0V,f = 1.0 MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current VG=VD=0V , Force Current --- --- -3.5 A Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating www.winsok.tw Page 2 Rev 2: Apr.2019 WSP6039 P-Ch MOSFET P-Channel Typical Characteristics www.winsok.tw Page 3 Rev 2: Apr.2019 WSP6039 P-Ch MOSFET www.winsok.tw Page 4 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.