WSP9435

WSP9435 P-Ch MOSFET Product Summery General Description The WSP9435 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 38mΩ -5.4A Applications The WSP9435 meet the RoHS and Green Product requirement , with full function reliability approved. z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Features z ESD:2KV z Advanced high cell density Trench technology SOP-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage -30 V Gate-Source Voltage ±20 V 1 -5.4 A 1 Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain -4.5 A Current1,2 -21 A 3 PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 80 ℃/W --- 30 ℃/W Rev 2: Apr.2019 WSP9435 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.023 --- V/℃ VGS=-10V , ID=-5.4A --- 38 48 VGS=-4.5V , ID=-2A --- 60 78 -1.0 -1.5 -2.3 V --- 4 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-4A --- 11 --- S Qg Total Gate Charge (-4.5V) --- 13 19 --- 1.3 2.2 --- 3.1 2.7 Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-15V , VGS=-10V , ID=-5.4A uA nC --- 8 9.6 Rise Time VDD=-15V , VGS=-10V , RG=6Ω, --- 13 15.1 Turn-Off Delay Time ID=-1A ,RL=10Ω. --- 26 36 Fall Time --- 7 12.0 Ciss Input Capacitance --- 642 --- Coss Output Capacitance --- 76 --- Crss Reverse Transfer Capacitance --- 66 --- Min. Typ. Max. Unit --- --- -2.0 A --- --- -21 A --- --- -1.2 V --- 13 --- nS --- 7 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-5.4A,dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper ,t≤10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 2: Apr.2019 WSP9435 P-Ch MOSFET Typical Characteristics 100 RDSON (mΩ) ID=-5.4A 80 60 42 2 4 6 -VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics 10 VDS=-15V ID=-5.4A -IS Source Current(A) 8 TJ=150℃ TJ=25℃ 6 4 2 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature (℃) 150 -50 50 100 150 Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 TJ , Junction Temperature (℃) Page 3 Rev 2: Apr.2019 WSP9435 P-Ch MOSFET Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 4 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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