WSP6956

WSP6956 Dual N-Ch MOSFET General Description Product Summery The WSP6956 is the highest performance trench Dual N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . · · RDSON ID 60V 15mΩ 10A Applications · · · Features BVDSS SMPS Synchronous Rectification. DC-DC Conversion. Load Switch. SOP-8 Pin Configuration Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Absolute Maximum Ratings (T A = 25°C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings VD SS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current ID Continuous Drain Current IDM a PD RJA c Pulsed Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient -55 to 150 TA=25°C 5 TA=25°C 10 TA=70°C 8 TA=25°C 38 TA=25°C 3.5 TA=70°C 2.2 t 10s 35 Steady State 70 V °C A W °C/W IAS b Avalanche Current, Single pulse L=0.1mH 27 A E AS b Avalanche Energy, Single pulse L=0.1mH 36 mJ Note a：Pulse width limited by max. junction temperature. o o Note b：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C). 2 Note c：Surface Mounted on 1in pad area. www.winsok.tw Page 1 Rev 2: Apr.2019 WSP6956 Dual N-Ch MOSFET Electrical Characteristics Symbol (T A = 25C unless otherwise noted) Parameter Test Conditions Min. Typ. Max. Unit - V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS( th) IGSS VGS=0V, IDS=250A VDS =48V, VGS=0V TJ=85°C 60 60 - - 1 - - 30 2.5 V nA A Gate Threshold Voltage VDS =VGS, IDS=250A 1 1.5 Gate Leakage Current VGS=±20V, VDS=0V - - ±100 VGS=10V, IDS=10A - 15 20 VGS=4.5V, IDS=9A - 18 24 ISD=10A, VGS=0V - 0.8 1.3 V - 21 - ns - 22 - nC - 2.5 - W - 1370 1780 - 135 - - 60 - - 14 26 - 8 15 - 38 69 - 12 22 - 12 - - 26 37 - 5 - - 5 - RDS(ON) d Drain-Source On-state Resistance mW Diode Characteristics VSD d Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics e RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf ISD=10A, dlSD/dt=100A/s VGS=0V,VDS=0V,f=1MHz VGS=0V, VDS =30V, Frequency=1.0MHz VDD =30V, R L =30W, IDS=1A, VGEN =10V, RG=6W Turn-off Fall Time pF ns Gate Charge Characteristics e Qg Total Gate Charge Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =30V, VGS=4.5V, IDS=10A VDS =30V, VGS=10V, IDS=10A nC Note d：Pulse test ; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev 2: Apr.2019 WSP6956 Dual N-Ch MOSFET Typical Operating Characteristics Power Dissipation Drain Current 12 4.0 3.5 10 ID - Drain Current (A) Ptot - Power (W) 3.0 2.5 2.0 1.5 8 6 4 1.0 2 0.5 o 0.0 o TA=25 C 0 20 40 60 0 80 100 120 140 160 TA=25 C,VG=10V 0 20 o 40 60 80 100 120 140 160 o Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance 100 2 Duty = 0.5 300ms 1ms 1 10ms 100ms 0.1 1s DC Normalized Effective Transient )L 10 Rd s(o n ID - Drain Current (A) im it 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 Mounted on 1in pad o RqJA :35 C/W o TA=25 C 0.01 0.01 0.1 1 10 100 300 1E-3 1E-4 VDS - Drain-Source Voltage (V) www.winsok.tw 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Page 3 Rev 2: Apr.2019 WSP6956 Dual N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 40 26 VGS=4,5,6,7,8,9,10V 24 RDS(ON) - On Resistance (mW) ID - Drain Current (A) 35 30 25 20 3V 15 10 5 22 20 VGS=4.5V 18 VGS=10V 16 14 12 2.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 10 3.0 0 8 16 24 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 40 1.6 1.4 Normalized Threshold Voltage 35 RDS(ON) - On Resistance (mW) 40 IDS =250mA IDS=10A 30 25 20 15 10 32 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 o VGS - Gate-Source Voltage (V) www.winsok.tw 1.2 Tj - Junction Temperature ( C) Page 4 Rev 2: Apr.2019 WSP6956 Dual N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.00 40 VGS = 10V IDS = 10A 10 1.50 IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 o Tj=150 C o Tj=25 C 1 0.50 o RON@Tj=25 C: 17mW 0.25 -50 -25 0 25 50 75 0.1 0.0 100 125 150 o 0.8 1.0 Capacitance Gate Charge 10 Frequency=1MHz 9 1600 8 VGS - Gate-Source Voltage (V) C - Capacitance (pF) 0.6 VSD - Source-Drain Voltage (V) 1800 Ciss 1400 1200 1000 800 600 400 0 0.4 Tj - Junction Temperature ( C) 2000 200 0.2 Coss Crss 0 8 16 VDS=30V IDS=10A 7 6 5 4 3 2 1 24 32 0 40 VDS - Drain-Source Voltage (V) www.winsok.tw 1.2 0 4 8 12 16 20 24 28 QG - Gate Charge (nC) Page 5 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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