WSP4888

WSP4888 Dual N-Channel MOSFET General Description Product Summery The WSP4888 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 13.5mΩ 9.8A Applicatio The WSP4888 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features SOP-8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 9.8 A ID@TC=70℃ 1 8.0 A 45 A IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 25 mJ IAS Avalanche Current 12 A 4 PD@TA=25℃ Total Power Dissipation 2.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 90 ℃/W RθJC Thermal Resistance Junction-Case1 --- 50 ℃/W www.winsok.tw Typ. Page 1 Rev 2: Apr.2019 WSP4888 Dual N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=8.5A --- 13.5 18 VGS=4.5V , ID=5A --- 18 25 1.5 1.8 2.5 V --- -5.8 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=8A --- 9 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 2.9 Ω Qg Total Gate Charge (4.5V) --- 6 8.4 Qgs Gate-Source Charge --- 1.5 --- Qgd Gate-Drain Charge --- 2.5 --- Turn-On Delay Time --- 7.5 9.8 Td(on) Tr Td(off) Tf VDS=15V , VGS=4.5V , ID=8.8A uA nC Rise Time VDD=15V , VGEN=10V , RG=6Ω --- 9.2 19 Turn-Off Delay Time ID=1A,RL=15Ω --- 19 34 --- 4.2 8 --- 590 701 --- 98 112 --- 59 91 Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit --- --- 3 A --- --- 45 A --- --- 1.1 V --- 15 --- nS --- 5.5 --- nC Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=9A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=8A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t