WSP9936
Dual N-Channel MOSFET
General Description
Product Summery
The WSP9936 is the highest performance
trench N-ch MOSFET with extreme high cell
density , which provide excellent RDSON
and gate charge for most of the small power
switching and load switch applications.
BVDSS
RDSON
ID
20V
14mΩ
8A
Applications
The WSP9936 meet the RoHS and Green
Product requirement with full function
reliability approved.
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z ESD:2KV
Features
SOP-8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
ID@TA=25℃
Continuous Drain Current, VGS @ 4.5V1
8
A
ID@TA=70℃
1
6.1
A
40
A
IDM
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
2
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
3
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-ambient
RθJC
Thermal Resistance Junction-Case1
www.winsok.tw
1
Page 1
Typ.
Max.
Unit
---
62.5
℃/W
---
10
℃/W
Rev 2: Apr.2019
WSP9936
Dual N-Channel MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
20
---
---
V
Reference to 25℃ , ID=1mA
---
0.022
---
V/℃
VGS=4.5V , ID=8A
---
15
26
---
19
34
0.5
0.75
1.1
V
---
-2.33
---
mV/℃
VDS=16V , VGS=0V , TJ=25℃
---
---
1
VDS=16V , VGS=0V , TJ=55℃
---
---
5
VGS=2.5V , ID=6.8A
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=5A
---
25
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
4.5
---
Ω
Qg
Total Gate Charge (4.5V)
---
15.6
17
---
1.3
---
---
2.5
---
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=10V , VGS=4.5V , ID=8A
uA
nC
---
4
9.5
Rise Time
VDD=10V , VGS=4.5V , RG=6Ω
---
6
24
Turn-Off Delay Time
ID=5A ,RL=10Ω.
---
25
73
Fall Time
---
4
39
Ciss
Input Capacitance
---
520
---
Coss
Output Capacitance
---
105
---
Crss
Reverse Transfer Capacitance
---
60
---
Min.
Typ.
Max.
Unit
---
---
3.7
A
---
---
40
A
---
---
1.3
V
---
19.2
---
nS
---
4.6
---
nC
Td(on)
Tr
Td(off)
Tf
Turn-On Delay Time
VDS=10V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,4
IS
Continuous Source Current
ISM
Pulsed Source Current2,4
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=8A , dI/dt=100A/µs , TJ=25℃
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t
很抱歉,暂时无法提供与“WSP9936”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 10+0.91200
- 50+0.84360
- 200+0.78660
- 600+0.72960
- 1500+0.68400
- 3000+0.65550