WST2303

WST2303 P-Ch MOSFET General Description Product Summery The WST2303 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -20V 65mΩ -3.8A Applications The WST2303 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ID@TC=25℃ ±8 V 1 -3.8 A 1 Continuous Drain Current, VGS @ -4.5V ID@TC=70℃ Continuous Drain Current, VGS @ -4.5V -2.5 A IDM Pulsed Drain Current2 -13 A 3 PD@TC=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Rev:1.0 May.2019 WST2303 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-3A --- 65 80 VGS=-2.5V , ID=-2A --- 80 100 105 130 -0.3 -0.5 -1.0 V --- 2.3 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=-1.8V , ID=-1.5A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 12.2 --- S Qg Total Gate Charge (-4.5V) --- 10.1 14.1 Qgs Gate-Source Charge --- 1.21 1.7 Qgd Gate-Drain Charge --- 2.46 3.4 Td(on) VDS=-15V , VGS=-4.5V , ID=-3A nC --- 5.6 11.2 Rise Time VDD=-10V , VGS=-4.5V , RG=3.3Ω --- 32.2 58 Turn-Off Delay Time ID=-3A --- 45.6 91 Fall Time --- 29.2 58.4 Ciss Input Capacitance --- 677 948 Coss Output Capacitance --- 82 115 Crss Reverse Transfer Capacitance --- 73 102 Min. Typ. Max. Unit --- --- -1 A --- --- -13 A --- --- -1 V --- 29 --- nS --- 8 --- nC Tr Td(off) Tf Turn-On Delay Time uA VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t