MMBTA42

SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES z High breakdown voltage z Low collector-emitter saturation voltage z Complementary to MMBTA92 (PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.3 A ICM Collector Current-Peak 0.5 A PC Collector Power dissipation 0.35 W RӨJA Thermal Resistance, junction to Ambient 357 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA,IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 10V, IC= 1mA 60 hFE(2) VCE= 10V, IC=10mA 100 hFE(3) VCE=10V, IC=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V DC current gain Transition frequency fT VCE= 20V, IC= 10mA, f=30MHz 50 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 200 MHz Typical Characteristics IC 18 VCE —— —— IC COMMON EMITTER Ta=25℃ hFE 80uA 70uA DC CURRENT GAIN (mA) 12 COLLECTOR CURRENT 14 IC 16 hFE 1000 90uA 60uA 50uA 10 40uA 8 30uA 6 Ta=100℃ Ta=25℃ 100 20uA 4 IB=10uA COMMON EMITTER VCE=10V 2 10 0.1 0 0 2 4 6 8 10 12 14 16 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 20 22 IC 10 VBEsat —— 900 Ta=100 ℃ 100 1 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 500 18 VCE (V) Ta=25℃ 100 IC (mA) IC Ta=25℃ 600 Ta=100 ℃ β=10 β=10 10 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC 300 0.1 100 fT VBE IC —— 100 (mA) IC (MHz) 300 fT 1 300 600 900 COMMON EMITTER VCE=20V Ta=25℃ 10 0.1 0.1 0 100 TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a 10 COMMON EMITTER VCE=10V 1200 1 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ (pF) C 10 Cob 1 0.1 1 REVERSE VOLTAGE 10 V PC 400 f=1MHz IE=0/IC=0 Cib 10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE 10 COLLECTOR CURREMT (mA) (mA) IC COLLECTOR CURRENT 1 —— IC 100 (mA) Ta 300 200 100 0 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 150 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.