MMBT5401

TRANSISTOR (PNP) MMBT5401 FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1．BASE 2．EMITTER 3．COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol Test conditions V(BR)CBO IC= -100µA, V(BR)CEO IC= -1mA, V(BR)EBO IE= -10µA, IC=0 IE=0 IB=0 MIN -160 V -5 V -0.1 ICBO VCB=-120 V, IEBO VEB=-4V , IC=0 hFE1 VCE= -5V, IC= -1mA 80 hFE2 VCE= -5V, IC=-10mA 100 hFE3 VCE= -5V, IC=-50mA 50 IE=0 -0.1 IC=-50 mA, IB= -5mA -0.5 VBE(sat) IC= -50 mA, IB= -5mA -1 VCE= -5V, IC= -10mA 100 5/30/2011 µA µA 300 VCE(sat) fT UNIT V -150 f Page 1 of 3 MAX V V MHz Typical Characteristics Page 2 of 3 MMBT5401 5/30/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 3 of 3 SOT-23 5/30/2011