NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
Marking Code: 1E
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
60
V
Collector Emitter Voltage
VCEO
40
V
Emitter Base Voltage
VEBO
6
V
IC
200
mA
Ptot
200
mW
Tj
150
O
Tstg
- 55 to + 150
O
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
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C
C
Characteristics at Ta = 25 OC
Parameter
Symbol
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 100 mA
hFE
hFE
hFE
hFE
hFE
Min.
Max.
Unit
40
70
100
60
30
300
-
-
Collector Emitter Cutoff Current
at VCE = 30 V
ICES
-
50
nA
Emitter Base Cutoff Current
at VEB = 3 V
IEBO
-
50
nA
Collector Base Breakdown Voltage
at IC = 10 µA
V(BR)CBO
60
-
V
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
40
-
V
Emitter Base Breakdown Voltage
at IE = 10 µA
V(BR)EBO
6
-
V
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
VCE(sat)
-
0.2
0.3
V
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
VBE(sat)
0.65
-
0.85
0.95
V
fT
300
-
MHz
Cob
-
4
pF
Delay Time
at VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
td
-
35
ns
Rise Time
at VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
tr
-
35
ns
Storage Time
at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA
tstg
-
200
ns
Fall Time
at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA
tf
-
50
ns
Transition Frequency
at VCE = 20 V, -IE = 10 mA, f = 100 MHz
Collector Output Capacitance
at VCB = 10 V, f = 100 KHz
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Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
3 of 5
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
Power Dissipation: Ptot (mW)
300
250
200
150
100
50
0
0
25
50
75
125
100
150
Ambient Temperature: Ta ( C)
O
Fig.10 Power Dissipation vs Ambient Temperature
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SOT-323 Package Outline Dimensions
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Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
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