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MMBT3904W

MMBT3904W

  • 厂商:

    CBI(创基)

  • 封装:

    SOT-323

  • 描述:

    功率(Pd):150mW 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 晶体管类型:NPN NPN

  • 数据手册
  • 价格&库存
MMBT3904W 数据手册
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code: 1E Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V IC 200 mA Ptot 200 mW Tj 150 O Tstg - 55 to + 150 O Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range 1 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. C C Characteristics at Ta = 25 OC Parameter Symbol DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA hFE hFE hFE hFE hFE Min. Max. Unit 40 70 100 60 30 300 - - Collector Emitter Cutoff Current at VCE = 30 V ICES - 50 nA Emitter Base Cutoff Current at VEB = 3 V IEBO - 50 nA Collector Base Breakdown Voltage at IC = 10 µA V(BR)CBO 60 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 40 - V Emitter Base Breakdown Voltage at IE = 10 µA V(BR)EBO 6 - V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA VCE(sat) - 0.2 0.3 V Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA VBE(sat) 0.65 - 0.85 0.95 V fT 300 - MHz Cob - 4 pF Delay Time at VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA td - 35 ns Rise Time at VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA tr - 35 ns Storage Time at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA tstg - 200 ns Fall Time at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA tf - 50 ns Transition Frequency at VCE = 20 V, -IE = 10 mA, f = 100 MHz Collector Output Capacitance at VCB = 10 V, f = 100 KHz 2 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. 3 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O Fig.10 Power Dissipation vs Ambient Temperature 4 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. SOT-323 Package Outline Dimensions 5 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
MMBT3904W 价格&库存

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MMBT3904W
  •  国内价格
  • 1+0.22660
  • 200+0.07546
  • 1500+0.04708
  • 3000+0.03740

库存:5113

MMBT3904W
    •  国内价格
    • 50+0.11297
    • 500+0.08900
    • 3000+0.07107
    • 6000+0.06308
    • 24000+0.05616
    • 51000+0.05249

    库存:2043

    MMBT3904W
    •  国内价格
    • 20+0.16720
    • 100+0.10360
    • 800+0.06840
    • 3000+0.04890
    • 6000+0.04650
    • 30000+0.04300

    库存:5113