MMBT3904

MMBT3904 TRANSISTOR (NPN) FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction SOT-23 1．BASE 2．EMITTER 3．COLLECTOR MARKING: 1AM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Total Device Dissipation 200 mW RθJA ThermalResistanceFromJunction toAmbient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature ℃ -55 ~ +150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEX VCE=30V, VBE(off)=3V 50 nA IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, IC= 50mA 60 hFE(3) VCE=1V, IC= 100mA 30 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V Emitter cut-off current DC current gain Transition frequency fT VCE=20V, IC=10mA, f=100MHz Delay Time td VCC=3V, Rise Time tr ts tf Storage Time Fall Time Page 1 of 4 VBE=-0.5V 300 300 MHz 35 nS IC=10mA, IB1=-IB2=1.0mA 35 nS VCC=3V, 200 nS 50 nS IC=10mA, IB1=-IB2=1mA 5/31/2011 Typical Characteristics Page 2 of 4 MMBT3904 5/31/2011 Page 3 of 4 5/31/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 4 of 4 SOT-23 5/31/2011