BAW56

Silicon Epitaxial Planar Switching Diode Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: A1 SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 C) O Parameter Peak Repetitive Reverse Voltage Continuous Reverse Voltage Forward Current (DC) Single Diode Loaded Double Diode Loaded Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current Symbol Value Unit VRRM 85 V VR 75 V IF 215 125 450 mA IFRM at t = 1 s at t = 1 ms at t = 1 μs mA Power Dissipation Ptot 0.5 1 4 350 Operating Junction Temperature Tj 150 O Tstg - 65 to + 150 O Symbol Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF 715 855 1 1.25 mV mV V V Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR IR IR IR 30 1 30 50 nA µA µA µA Diode Capacitance at VR = 0 , f = 1 MHz Cd 2 pF Reverse Recovery Time at IF = IR = 10 mA, RL = 100 Ω trr 4 ns Storage Temperature Range IFSM A mW C C Characteristics at Ta = 25 C O Parameter 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.