BAV199

Silicon Epitaxial Planar Diode Low leakage switching double diode For low leakage current applications 3 Feature • Very low leakage current • Medium speed switching times • Series pair configuration 1 2 Marking Code: PX SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit VRRM 85 V VR 85 V IF 160 140 mA IFRM 500 mA IFSM 4 1 0.5 A PD 250 Thermal Resistance Junction to Ambient Air RθJA 500 Operating and Storage Temperature Range Tj, Tstg - 65 to + 150 Peak Repetitive Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Single Diode Double Diode Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current at t = 1 µs at t = 1 ms at t = 1 s Power Dissipation mW C/W O C O Electrical Characteristics (Ta = 25 C) O Parameter Reverse Breakdown Voltage at IR = 100 µA Symbol Min. Typ. Max. Unit V(BR)R 85 - - V - - 0.9 1 1.1 1.25 Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF Reverse Current at VR = 75 V at VR = 75 V, Tj = 150 OC IR IR - - 5 80 nA Total Capacitance at VR = 0, f = 1 MHz CT - 2 - pF Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR, RL = 100 Ω trr - - 3 µs 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. V 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.