BAV99W

Silicon Epitaxial Planar Switching Diode 3 1 2 Marking Code: A7 Absolute Maximum Ratings (Ta = 25 C) Parameter O Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Single Diode Load Double Diode Load Value Unit VRRM 85 V VR 75 V IF 150 130 500 mA IFRM Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current Symbol at t = 1 µs at t = 1 ms at t = 1 s mA Total Power Dissipation Ptot 4 1 0.5 200 Thermal Resistance from Junction to Ambient RθJA 625 Tj 150 O C Tstg - 55 to + 150 O C Symbol Max. Junction Temperature Storage Temperature Range IFSM A mW O C/W Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, Tj = 150 OC at VR = 75 V, Tj = 150 OC VF 0.715 0.855 1 1.25 Unit V IR 30 1 30 50 nA µA µA µA Diode Capacitance at VR = 0, f = 1 MHz Cd 1.5 pF Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω trr 4 ns 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. SOT-323 Package Outline Dimensions 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.