BAV99

SWITCHING DIODES FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current (Double Diode Loaded) IF 125 mA Continuous Forward Current (Single Diode Loaded) IF 215 mA Repetitive Peak Forward Current IFRM 450 mA Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Ptot 0.5 1 4.5 350 Junction Temperature Tj 150 O C Storage Temperature Range Tstg - 65 to + 150 O C Symbol Max. Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, Tj = 150 OC at VR = 75 V, Tj = 150 OC IFSM VF IR A mW Unit 0.715 0.855 1 1.25 30 1 30 50 nA µA µA µA V Diode Capacitance at VR = 0 , f = 1 MHz Cd 1.5 pF Reverse Recovery Time at IF = IR = 10 mA, IR = 1 mA, RL = 100 Ω trr 4 ns 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.