2SD882PU

NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 10 ms) ICP 7 A Total power dissipation (Ta = 25 OC) Ptot 1 W Total power dissipation (Tc = 25 OC) Ptot 10 W Tj 150 O Tstg - 55 to + 150 O Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 30 60 100 160 200 - 120 200 320 400 - ICBO - - 1 µA IEBO - - 1 µA Collector Emitter Saturation Voltage at IC = 2 A, IB = 0.2 A VCE(sat) - - 0.5 V Base Emitter Saturation Voltage at IC = 2 A, IB = 0.2 A VBE(sat) - - 2 V Gain Bandwidth Product at VCE = 5 V, IC = 0.1 A fT - 90 - MHz Output Capacitance at VCB = 10 V, f = 1 MHz Cob - 45 - pF Parameter Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 20 mA at VCE = 2 V, IC = 1 A Current Gain Group R Q P E Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 3 V 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. o TYPICAL CHARACTERISTICS (Ta=25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NOTE 1.Aluminum heat sink of 1.0 mm thickness. 2.With no insulator film. 3.With silicon compound. he at 4 25c m 2 9cm 2 2 Without heat sin k 0 0 50 100 60 40 20 10 3 1 0.3 0.1 0 150 ite d d ite m Li nk si 100 cm 2 Lim Rth-Thermal Resistance- oC/W ite fin 6 S/b 80 n io at ip ss Di dT-Percentage of Rated Current-% 8 VCE=10V I C=1.0A 30 Duty=0.001 100 In P T-Total Power Dissipation-W 10 THERMAL RESISTANCE vs. PULSE WIDTH DERATING CURVES FOR ALL TYPES 50 100 0.3 150 1 3 10 30 100 300 1000 PW-Pulse Width-mS Ta-Ambient Temperature -o C Tc-Case Temperature -o C 0.3 I C-Collector Current-A 1 0.1 0.03 NOTE 1.T C=25o C 2.Curves must be derated Iinearly with increase of temperature and Duty Cycle. 3 6 10 7 1.2 6 5 0.8 4 3 0.4 30 60 4 12 8 0.3 3 1 3 10 20 3 10 100 30 10 3 Cib 100 60 30 Cob 10 6 3 1 0.01 I C-Collector Current-A f=1.0MHz I E =0(Cob) I C=0(Cib ) 300 Cib -Input Capacitance-pF Cob-Output Capacitance-pF VCE(sat) 0.01 0.006 0.003 INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE VCE=5.0V Forced air cooling (with heat sink) 300 1 16 GAIN BANDWIDTH PRODUCT vs. COLLCETOR CURRENT 1000 VBE(sat) 0.001 0.003 0.01 0.03 0.1 0.3 1 0.6 VBE I C-Collector Current-A I C=10.I B Pulse Test 0.1 0.06 0.03 10 6 3 o Voltage-V VCE-Collector to Emitter f T-Gain Bandwidth Product-MHz VBE(sat) -Base Saturation Voltage-v VCE(sat)-Collector Saturation Voltage-V 1 0.6 0.3 30 100 BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 3 60 1 0.001 0.003 0.01 0.03 0.1 0.3 0 VCE-Collector to Emitter Voltage-V 10 2 h FE 100 I B =1mA 0.01 1 300 10 9 8 1.6 VCEO MAX. IC-Collector Current-A 3 VCE=2.0V Pulse Test Pulse Test h FE -DC Current Gain I C(pulse) MAX.(PW 10ms,Duty Cycle 50%) PW 1m 10 s =1 I C(DC) MAX. ms 00 DC s Di ss (S i pa ing tio L le S/ n no imit b ed nr Li ep m et it e iti d ve pu lse ) 0.03 0.1 I C-Collcetor Current-A 0.3 1 1 3 6 10 30 60 VCB-Collector to Base Voltage-V VEB -Emitter to Base Voltage-V 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 0.1 VBE -Base Emitter Voltage-V 1000 2.0 10 DC CURRENT GAIN, BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE SAFE OPERATING AREAS SOT-89 PACKAGE OUTLINE 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.