2N7002KT

SOT-523 Plastic-Encapsulate MOSFETS 2N7002KT N-Channel MOSFET V(BR)DSS ID RDS(on)MAX SOT-523 )*( ' ( 3 +, +)*,( FEATURE 1. GATE 2. SOURCE 3. DRAIN 1 2 APPLICATION z High density cell design for Low RDS(on) z     !" # z z Voltage controlled small signal switch !$%!$$ &" z Rugged and reliable z High saturation current capability z ESD protected Equivalent Circuit M MOSFET MAXIMUM RATINGS (Ta=25Я unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 60 V VS -Source Voltage ±0 V ID Continuous Drain Current 340 mA IDM Pulsed Drain Current(note1) 800 mA PD Power Dissipation 0.15 W Tj Junction Temperature 150 Я Tstg Storage Temperature -55~+150 Я RșJA Thermal Resistance from Junction to Ambient 625 Я/W Page 1 of 4 11/29 /2018       Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source Breakdown Voltage V (BR) DSS VGS = 0V, ID =250μA 60 1 GateThreshold Voltage (note 2) VGS(th) VDS =VGS, ID =1mA Zero Gate Voltage Drain Current IDSS VDS =48V,VGS = 0V Gate-Source Leakage Current IGSS VGS =±20V, VDS = 0V Drain-Source On-Resistance (note 2) V 1.3  V 1 μA ±10 μA VGS =4.5V, ID =200mA 1.1 5.3 Ÿ VGS =10V, ID =500mA 0.9 5 Ÿ 40 pF 30 pF 10 pF RDS(on) DYNAMIC PARAMETERS (note 3) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =10V,VGS =0V,f =1MHz SWITCHING PARAMETERS(note 3) Turn-on Delay Time td(on) VGS=10V,VDD=50V, RG=50ȍ 10 ns Turn-off Delay Time td(off) RGS=50ȍ, RL=250ȍ 15 ns Reverse Recovery Time trr Recovered Charge Qr VGS=0V,IS=300mA,VR=25V, dIs/dt=-100A/us VGS=0V,IS=300mA,VR=25V dIs/dt=-100A/us 30 ns 30 nC GATE-SOURCE ZENER DIODE Gate-Source Breakdown Voltage BVGSO Igs=f1mA(Open Drain) f21.5 f30 V 1.5 V DRAIN-SOURCE DIODE Diode Forward Voltage(note 2) VSD IS=300mA, VGS = 0V Continuous Diode Forward Current IS 0.2 A Pulsed Diode Forward Current(note1) ISM 0.53 A Notes : 1. Repetitive rating˖Pluse width limited by junction temperature. 2. Pulse Test : Pulse width”300μs, duty cycle”%. 3. Guaranteed by design, not subject to production testing. Page 2 of 4 11/29 /2018   Output Characteristics Transfer Characteristics 1.2 1.2 Ta=25℃ VDS=3V VGS=5V,6V,7V,10V Pulsed Pulsed (A) (A) VGS=4V VGS=3V 0.4 0.0 DRAIN CURRENT DRAIN CURRENT ID ID 0.8 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0.8 Ta=100℃ 0.4 0.0 5 Ta=25℃ 0 (V) 2 4 6 GATE TO SOURCE VOLTAGE VGS 8 (V) RDS(ON) —— VGS RDS(ON) —— ID 5 10 Ta=25℃ Ta=25℃ Pulsed Pulsed RDS(ON) RDS(ON) ( ) 8 ( ) 4 ON-RESISTANCE ON-RESISTANCE 3 2 VGS=4.5V 1 ID=500mA 6 4 2 VGS=10V 0 0 300 600 900 DRAIN CURRENT ID 1200 0 1500 0 (mA) 2 4 8 VGS 10 (V) Threshold Voltage IS —— VSD 2 1 6 GATE TO SOURCE VOLTAGE 1.8 Pulsed VTH 0.1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.6 Ta=25℃ 0.01 1.4 ID=250uA 1.2 1.0 0.8 0.6 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE Page 3 of 4 1.2 VSD (V) 1.4 1.6 0.4 25 50 75 JUNCTION TEMPERATURE 100 Tj 125 ( ℃) 11/29 /2018 Page 4 of 4 11/29 /2018