1SS181

Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: A1 SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V IF(AV) 100 mA Maximum Peak Forward Current IFM 300 mA Non-repetitive Peak Forward Surge Current (10 ms) IFSM 2 A Power Dissipation Ptot 350 mW Junction Temperature Tj 150 O Tstg - 55 to + 150 O Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 30 V at VR = 80 V IR 0.1 0.5 µA Total Capacitance at VR = 0 , f = 1 MHz CT 4 pF Reverse Recovery Time at IF = 10 mA trr 4 ns Average Rectified Forward Current Storage Temperature Range C C Characteristics at Ta = 25 C O Parameter 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.