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1N4148W

1N4148W

  • 厂商:

    CBI(创基)

  • 封装:

    SOD-123

  • 描述:

    二极管配置:独立式 功率:400mW 直流反向耐压(Vr):75V 平均整流电流(Io):150mA 正向压降(Vf):1.25V@150mA 反向电流(Ir):1μA@75V 反向恢复时间(trr)...

  • 数据手册
  • 价格&库存
1N4148W 数据手册
Silicon Epitaxial Planar Switching Diode Features PINNING • SOD-123 package • Fast switching • These diodes are also available in other case style including the DO-35 case with the type designation 1N4148, the MiniMELF case with the type designation LL4148 and the MicroMELF case with the type designation MCL4148. PIN 1 2 DESCRIPTION Cathode Anode 2 1 Top View Marking Code: " " Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V Average Rectified Forward Current IF(AV) 150 mA Non-repetitive Peak Forward Surge Current at t = 1 μs IFSM 2 A Power Dissipation Ptot 400 mW Thermal Resistance from Junction to Ambient Air RθJA 312 Tj 150 O Tstg - 65 to + 150 O Junction Temperature Storage Temperature Range C/W O C C Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 1 µA Symbol Min. Max. Unit V(BR)R 75 - V - 0.715 0.855 1 1.25 - 1 25 50 30 µA nA µA µA Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF Peak Reverse Current at VR = 75 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC IR Total Capacitance at VR = 0 V, f = 1 MHz CT - 2 pF Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω trr - 4 ns 1 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. V Forward characteristics 3 I F ( m A) 5K 102 Vo ~ 2nF 60 VRF =2V 10 Rectification Efficiency Measurement Circuit 10 Tj=100 C Tj=25 C 1 10-2 10-1 0 1 2 VF (V) Amissible power dissipation vs. ambient temperature 1000 Leakage current vs. junction temperature 10 4 5 2 103 5 600 I R (nA) P tot (mW) 800 400 2 10 2 5 2 10 200 5 VR=20V 2 0 1 200 100 0 Tj ( C) Reverse capacitance vs. reverse voltage Amissible repetitive peak forward current vs. pulse duration 100 Tj=25 C f=1MHz 1.1 5 4 3 2 10 I FRM (A) Ctot (VR) Ctot (0 V) 1.0 0.9 0.8 V=0 5 4 3 2 0.1 0.2 1 0.5 5 4 3 2 0.7 0 2 4 6 VR (V) 200 100 Tamb ( C) 8 10 0.1 -5 10 2 5 -4 2 10 5 -3 2 10 5 10-2 2 5 -1 2 10 5 tp (s) 2 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. 1 2 5 10 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
1N4148W 价格&库存

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1N4148W
  •  国内价格
  • 20+0.09990
  • 100+0.06190
  • 800+0.04080
  • 3000+0.02920
  • 6000+0.02780
  • 30000+0.02560

库存:5284

1N4148W
  •  国内价格
  • 1+0.13530
  • 200+0.04510
  • 1500+0.02827
  • 3000+0.02233

库存:5284

1N4148W

库存:3000

1N4148W
  •  国内价格
  • 50+0.04752
  • 500+0.03759
  • 3000+0.03122
  • 6000+0.02787
  • 24000+0.02506
  • 51000+0.02344

库存:64439

1N4148W
  •  国内价格
  • 3000+0.02670
  • 9000+0.02600
  • 237000+0.02520

库存:3000