MM3Z8V2

MM3Z2V0~MM3Z75 Silicon Planar Zener Diodes PINNING Features • Total power dissipation : max. 300 mW PIN DESCRIPTION 1 Cathode 2 Anode • Small plastic package suitable for 2 1 surface mounted design • Tolerance approximately ± 5% Top View Simplified outline SC-76 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Value Unit Ptot 300 mW Tj 150 O Tstg - 55 to + 150 O Symbol Max. RθJA 417 VF 0.9 C C Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Unit C/W O V SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 01 MM3Z2V0~MM3Z75 Characteristics at Ta = 25 OC Marking Code Type MM3Z2V0 B0 Zener Voltage Range 1) Dynamic Impedance Vznom VZT at IZT (V) 2.0 (V) 1.8...2.15 (mA) 5 ZZT Max. ( Ω) 100 at IZT (mA) 5 Reverse Leakage Current IR at VR Max. (μA) 120 (V) 0.5 MM3Z2V2 C0 2.2 2.08...2.33 5 100 5 120 0.7 MM3Z2V4 1C 2.4 2.28...2.56 5 100 5 120 1 MM3Z2V7 1D 2.7 2.5...2.9 5 110 5 120 1 MM3Z3V0 1E 3.0 2.8...3.2 5 120 5 50 1 MM3Z3V3 1F 3.3 3.1...3.5 5 130 5 20 1 MM3Z3V6 1H 3.6 3.4...3.8 5 130 5 10 1 MM3Z3V9 1J 3.9 3.7...4.1 5 130 5 5 1 MM3Z4V3 1K 4.3 4...4.6 5 130 5 5 1 MM3Z4V7 1M 4.7 4.4...5 5 130 5 2 1 MM3Z5V1 1N 5.1 4.8...5.4 5 130 5 2 1.5 MM3Z5V6 1P 5.6 5.2...6 5 80 5 1 2.5 MM3Z6V2 1R 6.2 5.8...6.6 5 50 5 1 3 MM3Z6V8 1X 6.8 6.4...7.2 5 30 5 0.5 3.5 MM3Z7V5 1Y 7.5 7...7.9 5 30 5 0.5 4 MM3Z8V2 1Z 8.2 7.7...8.7 5 30 5 0.5 5 MM3Z9V1 2A 9.1 8.5...9.6 5 30 5 0.5 6 MM3Z10 2B 10 9.4...10.6 5 30 5 0.1 7 MM3Z11 2C 11 10.4...11.6 5 30 5 0.1 8 MM3Z12 2D 12 11.4...12.7 5 35 5 0.1 9 MM3Z13 2E 13 12.4...14.1 5 35 5 0.1 10 MM3Z15 2F 15 13.8...15.6 5 40 5 0.1 11 MM3Z16 2H 16 15.3...17.1 5 40 5 0.1 12 MM3Z18 2J 18 16.8...19.1 5 45 5 0.1 13 MM3Z20 2K 20 18.8...21.2 5 50 5 0.1 15 MM3Z22 2M 22 20.8...23.3 5 55 5 0.1 17 MM3Z24 2N 24 22.8...25.6 5 60 5 0.1 19 MM3Z27 2P 27 25.1...28.9 2 70 2 0.1 21 MM3Z30 2R 30 28...32 2 80 2 0.1 23 MM3Z33 2X 33 31...35 2 80 2 0.1 25 MM3Z36 2Y 36 34...38 2 90 2 0.1 27 MM3Z39 2Z 39 37...41 2 100 2 0.1 30 MM3Z43 3A 43 40...46 2 130 2 0.1 33 MM3Z47 3B 47 44...50 2 150 2 0.1 36 MM3Z51 3C 51 48...54 2 180 2 0.1 39 MM3Z56 3D 56 52...60 2 200 2 0.1 43 MM3Z62 3E 62 58...66 2 215 2 0.1 47 MM3Z68 3F 68 MM3Z75 3H 75 1) VZT is tested with pulses (20 ms). 64...72 2 240 2 0.1 52 70...79 2 265 2 0.1 56 SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 01 MM3Z2V0~MM3Z75 Breakdown characteristics Tj = constant (pulsed) mA 50 Iz Tj=25o C 3V9 2V7 6V8 4V7 3V3 40 8V2 5V6 30 20 Test current Iz 5mA 10 0 0 1 2 3 4 5 6 8 7 9 10 V Vz Breakdown characteristics Tj = constant (pulsed) mA 30 Tj=25 oC 10 12 Iz 15 20 18 22 27 Test current Iz 5mA 10 33 0 0 10 20 30 40 V Vz Power Dissipation: Ptot (mW) 300 200 100 0 0 25 150 100 Ambient Temperature: Ta ( C) O Derating Curve SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 01 MM3Z2V0~MM3Z75 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SC-76 A c HE A D E bp UNIT A mm 1.10 0.80 bp 0.40 0.25 C 0.15 0.10 D 1.80 1.60 E HE 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 01