AOD417

AOD417 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.018 at VGS = - 10 V - 40 0.025 at VGS = - 4.5 V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested Qg (Typ.) 13 nC APPLICATIONS • Load Switch • Battery Switch S TO-252 G G D D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation Limit - 30 ± 20 ID - 40 - 35 - 30.0a, b - 28 a, b IDM Pulsed Drain Current Continuous Source-Drain Diode Current Symbol VDS VGS TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C V A - 150 - 3.5 IS - 2.1a, b 40 27 PD 2.5a, b 1.6a, b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot t ≤ 10 s Steady State Symbol RthJA RthJF Typical 40 24 Maximum 50 30 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 °C/W. d. Based on TC = 25 °C. E-mail：China@VBsemi TEL:86-755-83251052 1 AOD417 www.VBsemi.tw SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage V - 31 mV/°C 4.5 VGS(th) VDS = VGS, ID = - 250 µA - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS ≤ - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 7.0 A tr - 40 VDS = - 15 V, ID = - 7.0 A 0.025 18 VDS = - 15 V, VGS = 0 V, f = 1 MHz 1455 180 Ω S pF 145 VDS = - 15 V, VGS = - 10 V, ID = - 7.0 A VDS = - 15 V, VGS = - 4.5 V, ID = - 7.0 A 25 38 13 20 3.5 VDD = - 15 V, RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω 0.4 2.0 4.0 10 20 13 20 35 tf 9 18 td(on) 38 57 89 134 tr nC 5.5 f = 1 MHz 23 td(off) µA A 0.018 VGS = - 4.5 V, ID = - 5.6 A td(on) td(off) - 1.0 VDD = - 15 V, RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω tf 22 33 11 17 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 6.5 - 30 TC = 25 °C IS = - 5.6 A, VGS = 0 V IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.71 - 1.2 V 22 33 ns 17 26 nC 13 9 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 2 AOD417 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 4.0 VGS = 10 V thru 4 V TC = - 55 °C 3.2 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 10 2.4 TC = 25 °C 1.6 VGS = 3 V TC = 125 °C 0.8 5 VGS = 2V 0 0 1 2 3 4 0.0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.035 1800 0.030 1500 VGS = 4.5 V 0.025 0.020 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 10 V 0.015 1200 900 600 Coss 300 0.010 Crss 0 0 0 5 10 15 20 25 0 30 6 12 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.6 VGS = - 10 V, ID = - 5.6 A ID = 7 A 8 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 VDS = 15 V 6 VDS = 24 V 4 2 1.2 VGS = - 4.5 V, ID = - 7 A 1.0 0.8 0 0 4 8 12 16 Qg - Total Gate Charge (nC) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 20 24 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 AOD417 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 100 10 TJ = 150 °C TJ = 25 °C 1 0.04 R DS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 7 A TJ = 125 °C 0.03 0.02 TJ = 25 °C 0.01 0.00 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 4 8 12 16 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 50 0.5 40 Power (W) VGS(th) Variance (V) 0.4 0.3 ID = 250 μA 0.2 30 20 ID = 5 mA 0.1 10 0 - 0.1 - 0.2 - 50 0 0.001 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0.01 0.1 1 10 100 Time (s) 175 Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 1s 10 s DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area E-mail：China@VBsemi TEL:86-755-83251052 4 AOD417 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Current Derating* 5 3.0 2.5 4 Power (W) Power (W) 2.0 3 2 1.5 1.0 1 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 5 AOD417 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 6 AOD417 www.VBsemi.tw TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. E-mail：China@VBsemi TEL:86-755-83251052 7 AOD417 www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 8 AOD417 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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