XA213-G4J

XA213-G4J SOT363 (SC-76-6) Applications l Pin Out GND L ow insertion loss (0.4 dB @ 2.4 GHz) Isolation 22 dB @ 2.4 GHz l Low DC power consumption l PHEMT process l Operates with 1.8 V control voltage 5 Features 6 CBL 2 J3 1 T /R switch in WLANs, BluetoothÒ and medium-power telecommunication applications V2 CBL J1 l CBL 4 3 J2 l V1 bl bl DC blocking capacitors (C ) must be supplied externally for positive voltage operation. C = 100 pF for operation >500 MHz. Description The XA213-G4J is a medium-power IC FET SPDT switch in a lowcost miniature SC-70 6-lead plastic package. The AS213-92 features low insertion loss and positive voltage operation with very low DC power consumption. This general-purpose switch can be used in a variety of telecommunications applications. Electrical Specifications at 25 °C (0, 3 V) Parameter(1) loss(2) Frequency Min. Typ. Max. Unit 0.5 0.6 0.7 dB dB dB 0.1–1.0 GHz 1.0–2.0 GHz 2.0–3.0 GHz 0.3 0.4 0.5 Isolation 0.1–1.0 GHz 1.0–2.0 GHz 2.0–3.0 GHz 27 23 19 VSWR(3) 0.1–1.0 GHz 1.0–3.0 GHz 24 20 16 1.3:1 1.4:1 dB dB dB Insertion 1. All measurements made in a 50 W system, unless otherwise specified. 2. Insertion loss changes by 0.003 dB/°C. 3. Insertion loss state. 1 XA213-G4J SOT363(SC-76-6) Operating Characteristics at 25 °C (0, 3 V) Parameter Condition Frequency Min. Typ. Max. Switching characteristics Rise, fall On, off Video feedthru 10/90% or 90/10% RF 50% CTL to 90/10% RF TRISE = 1 ns, BW = 500 MHz Input power for 1 dB compression 0/1.8 V 0/3 V Intermodulation intercept point (IP3) For two-tone input power 5 dBm 0/3 V 0.5–3 GHz 40 0.5–3 GHz 0.5–3 GHz Thermal resistance V V high low Control voltages Unit 10 20 25 ns ns mV 20 27 dBm dBm 25 dBm °C/W = 0 to 0.2 V @ 20 µA max. = 1.8 V @ 100 µA max. to 5 V @ 200 mA max. 0 -10 -0.25 -15 -0.50 -20 Isolation (dB) Insertion Loss (dB) Simulated Performance Data (0, 3 V) -0.75 -1.00 -1.25 -1.75 -45 -50 0.5 1.0 1.5 2.0 2.5 3.0 1.0 1.5 2.0 2.5 Insertion Loss vs. Frequency Isolation vs. Frequency 1.3 VSWR 0.5 Frequency (GHz) 1.4 1.2 1.1 1.0 0 0 Frequency (GHz) 1.5 0.5 1.0 1.5 2.0 Frequency (GHz) VSWR vs. Frequency -35 -40 0 -30 -1.50 -2.00 2 -25 2.5 3.0 3.0 XA213-G4J SOT363(SC-76-6) Absolute Maximum Ratings Value V1 V2 J1–J2 J1–J3 2 W max. for f > 500 MHz 500 mW for f < 500 MHz VCTL = 0/8 V 0 Vhigh Isolation Insertion loss 0 Insertion loss Isolation Supply voltage 8V Control voltage -0.2 V, +8 V Operating temperature -40 °C to +85 °C Storage temperature -65 °C to +150 °C V high Characteristic RF input power Any state other than described in the truth table will put the device in an undefined state. An undefined state will not damage the device. V = 1.8 to 5 V. high Truth Table Performance is guaranteed only under the conditions listed in the specifications table and is not guaranteed under the full range(s) described by the Absolute Maximum specifications. Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the device and will void the warranty. CAUTION: A lthough this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. 3