VBZFB40N03

VBZFB40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS 30 RDS(on) VGS = 10 V 15 V mΩ RDS(on) VGS = 4.5 V 20 mΩ ID 40 A FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Single Configuration RoHS COMPLIANT APPLICATIONS TO-251 • DC/DC Conversion - System Power D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Limit 30 ± 20 40 36 14b, c 10 b, c 165 75 40 40 2.9b, c 28 18 3.5b, c 2.2b, c - 55 to 150 260 ID IDM IAS EAS IS PD TJ, Tstg Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 29 3.6 Maximum 36 4.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. 1 VBZFB40N03 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 33 ID = 250 µA mV/°C -5 VGS(th) VDS = VGS , ID = 250 µA 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V 1.2 µA A 15 VGS = 10 V, ID = 10 A 15 VGS = 4.5 V, ID = 7 A 20 VDS = 15 V, ID = 10 A 24 mΩ S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 1700 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A td(off) 33 18 nC 7.3 VDS = 15 V, VGS = 4.5 V, ID = 10 A 6.2 f = 1 MHz td(on) tr pF 200 150 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 0.8 1.6 15 30 12 24 13 26 tf 10 20 td(on) 9 18 tr td(off) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf 9 18 14 28 8 16 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 76 TC = 25 °C 72 IS = 3 A, VGS = 0 V IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.78 1.2 V 17 34 ns 9.5 19 nC 10 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBZFB40N03 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 8 VGS = 10 thru 5 V VGS = 4 V 30 20 VGS = 3 V I D - Drain Current (A) I D - Drain Current (A) 40 6 4 TC = 25 °C 2 10 TC = 125 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 0 2.5 4 2 10 8 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1250 0.030 0.020 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 1000 VGS = 10 V 0.010 750 500 Coss 0.005 250 Crss 0.000 0 40 0 50 70 60 80 0 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.8 10 ID = 10 A ID = 10 A 1.6 8 VGS = 10 V VDS = 15 V VDS = 20 V 4 2 0 0.0 1.4 (Normalized) VDS = 10 V 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 1.2 VGS = 4.5 V 1.0 0.8 3.2 6.4 9.6 Qg - Total Gate Charge (nC) Gate Charge 12.8 16.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 VBZFB40N03 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.06 100 ID = 10 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 0.05 TJ = 25 °C 1 0.1 0.01 0.04 0.03 TJ = 125 °C 0.02 0.01 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 1.0 0.8 1.2 0 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 120 0.4 0.2 96 0.0 Power (W) VGS(th) Variance (V) 1 - 0.2 ID = 5 mA 72 48 - 0.4 ID = 250 µA 24 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 100 Limited by RDS(on)* I D - Drain Current (A) 1 10 Single Pulse Power (Junction-to-Ambient) Threshold Voltage 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited DC 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 0.1 Time (s) TJ - Temperature (°C) 100 VBZFB40N03 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 I D - Drain Current (A) 32 24 Package Limited 16 8 0 0 25 50 100 75 125 150 TC - Case Temperature (°C) 35 2.0 28 1.6 Power (W) Power (W) Current Derating* 21 14 1.2 0.8 0.4 7 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Case Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 VBZFB40N03 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 1 10 VBZFB40N03 www.VBsemi.com TOĆ251AA (DPAK) E A L2 b2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b MILLIMETERS c1 e c A1 INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 3.89 9.53 0.153 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 Note: Dimension L3 is for reference only. 7 VBZFB40N03 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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